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SISS23DN-T1-GE3
+BOMMOSFET P-CH 20V 50A PPAK 1212-8S
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SISS23DN-T1-GE3
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Bảng dữ liệu SISS23DN-T1-GE3 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 8840 pF @ 15 V |
| Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8S |
| Package / Case | PowerPAK® 1212-8S |
| Base Product Number | SISS23 |
Tổng quan
Description
The SISS23DN-T1-GE3 is an advanced integrated circuit designed for various applications in signal processing and control systems. It is part of a family of semiconductor devices that enhance performance in electronic devices by providing efficient power management and signal amplification.
Key features typically include low power consumption, high reliability, and scalability for different applications. This IC can be utilized in consumer electronics, industrial equipment, and automotive systems, facilitating improved functionality and efficiency.
Manufacturers often incorporate advanced technologies that ensure compatibility with various communication protocols, making it suitable for IoT and smart device integration. The SISS23DN-T1-GE3 is engineered to meet rigorous standards, ensuring robust performance even in challenging environments.
In summary, the SISS23DN-T1-GE3 is a versatile solution for engineers and developers seeking to enhance their electronic designs with reliable and efficient signal processing capabilities.
Key features typically include low power consumption, high reliability, and scalability for different applications. This IC can be utilized in consumer electronics, industrial equipment, and automotive systems, facilitating improved functionality and efficiency.
Manufacturers often incorporate advanced technologies that ensure compatibility with various communication protocols, making it suitable for IoT and smart device integration. The SISS23DN-T1-GE3 is engineered to meet rigorous standards, ensuring robust performance even in challenging environments.
In summary, the SISS23DN-T1-GE3 is a versatile solution for engineers and developers seeking to enhance their electronic designs with reliable and efficient signal processing capabilities.
Equivalent
The SISS23DN-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and IRF3708. However, specific replacements may depend on parameters like voltage, current ratings, and package type. Always check datasheets to ensure compatibility for your application.
Features
The SISS23DN-T1-GE3 is a high-performance, N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 30V.
2. Current Capacity: The device supports continuous drain current (I_D) ratings, making it suitable for high-load applications.
3. Low On-Resistance: It offers a low R_DS(on), which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: Optimized for rapid switching applications, providing improved performance in high-frequency circuits.
5. Thermal Performance: Features a robust thermal design for efficient heat dissipation.
6. Package Type: Housed in a compact DPAK (TO-252) package, facilitating easy integration into circuits.
7. Application Versatility: Ideal for use in power supplies, motor drivers, and other electronic circuits requiring efficient switching.
Overall, the SISS23DN-T1-GE3 is a reliable choice for engineers looking to enhance the performance of their electronic designs.
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 30V.
2. Current Capacity: The device supports continuous drain current (I_D) ratings, making it suitable for high-load applications.
3. Low On-Resistance: It offers a low R_DS(on), which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: Optimized for rapid switching applications, providing improved performance in high-frequency circuits.
5. Thermal Performance: Features a robust thermal design for efficient heat dissipation.
6. Package Type: Housed in a compact DPAK (TO-252) package, facilitating easy integration into circuits.
7. Application Versatility: Ideal for use in power supplies, motor drivers, and other electronic circuits requiring efficient switching.
Overall, the SISS23DN-T1-GE3 is a reliable choice for engineers looking to enhance the performance of their electronic designs.
Pinout
The SISS23DN-T1-GE3 is a dual N-channel MOSFET in a surface-mount SO-8 package. It has a pin count of 8.
The functions of the pins are as follows:
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Drain1 (D1) - The drain terminal for the first N-channel MOSFET.
3. Source1 (S1) - The source terminal for the first N-channel MOSFET.
4. Gate2 (G2) - Controls the second N-channel MOSFET.
5. Drain2 (D2) - The drain terminal for the second N-channel MOSFET.
6. Source2 (S2) - The source terminal for the second N-channel MOSFET.
7. Drain1/Source2 (D1/S2) - Common terminal for the first drain and the second source.
8. GND - Ground connection.
This device is typically used in power management and switching applications, offering low on-resistance and fast switching capabilities.
The functions of the pins are as follows:
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Drain1 (D1) - The drain terminal for the first N-channel MOSFET.
3. Source1 (S1) - The source terminal for the first N-channel MOSFET.
4. Gate2 (G2) - Controls the second N-channel MOSFET.
5. Drain2 (D2) - The drain terminal for the second N-channel MOSFET.
6. Source2 (S2) - The source terminal for the second N-channel MOSFET.
7. Drain1/Source2 (D1/S2) - Common terminal for the first drain and the second source.
8. GND - Ground connection.
This device is typically used in power management and switching applications, offering low on-resistance and fast switching capabilities.
Manufacturer
The SISS23DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, USA, and is known for its wide range of products, which include resistors, capacitors, inductors, diodes, and transistors.
Vishay serves various industries, including automotive, industrial, telecommunications, consumer electronics, and military/aerospace. The company's commitment to innovation and quality has established it as a key player in the electronics sector, providing components that are essential for numerous applications in modern technology. Vishay focuses on high-performance components that enhance the reliability and efficiency of electronic systems.
Vishay serves various industries, including automotive, industrial, telecommunications, consumer electronics, and military/aerospace. The company's commitment to innovation and quality has established it as a key player in the electronics sector, providing components that are essential for numerous applications in modern technology. Vishay focuses on high-performance components that enhance the reliability and efficiency of electronic systems.
Application
The SISS23DN-T1-GE3 is a N-channel MOSFET primarily used in power management applications. Its application areas include:
1. DC-DC Converters: Efficiently switching and regulating voltage.
2. Motor Drivers: Controlling electric motors in various devices.
3. Power Supply Circuits: Enhancing performance in power supplies for electronics.
4. Load Switching: Managing power to different loads in circuits.
5. Automotive Applications: Used in electric vehicles and hybrid systems for better energy efficiency.
Its low on-resistance and high-speed switching characteristics make it suitable for these applications.
1. DC-DC Converters: Efficiently switching and regulating voltage.
2. Motor Drivers: Controlling electric motors in various devices.
3. Power Supply Circuits: Enhancing performance in power supplies for electronics.
4. Load Switching: Managing power to different loads in circuits.
5. Automotive Applications: Used in electric vehicles and hybrid systems for better energy efficiency.
Its low on-resistance and high-speed switching characteristics make it suitable for these applications.
Package
The SISS23DN-T1-GE3 is packaged in a SOT-23-3 form factor. This compact surface-mount package is commonly used for small signal transistors and integrated circuits, allowing for efficient space utilization on circuit boards.
