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SPP11N60C3
+BOMMOSFETs N-Ch 600V 11A TO220-3 CoolMOS C3
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #SPP11N60C3
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Bảng dữ liệu SPP11N60C3 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Packaging | Tube |
| StandardPackQty | 500 |
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Description
Key features of the SPP11N60C3 include:
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 11A, making it suitable for high-voltage applications.
2. Low On-Resistance: The device offers low on-state resistance (R_DS(on)), leading to reduced conduction losses.
3. Fast Switching: Its fast switching capability enhances efficiency in switching applications, reducing energy loss.
4. Thermal Performance: The package allows for efficient heat dissipation, improving reliability and performance under thermal stress.
5. Applications: It is often used in resonant mode power supplies, server and telecom power supplies, and power factor correction (PFC) circuits.
The SPP11N60C3 is valued for its balance of high efficiency and performance in demanding electronic applications.
Equivalent
1. STP10NK60Z from STMicroelectronics
2. IRFP460 from Vishay
3. FDPF12N60NZ from ON Semiconductor
These alternatives have similar voltage and current ratings suitable for similar applications, though it's crucial to verify specific parameters like threshold voltage, gate charge, and package type for compatibility.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 600V and a continuous drain current (I_D) of 11A.
2. R_DS(on): The on-resistance is typically around 0.38 ohms, which helps reduce power losses during operation.
3. Technology: Utilizes CoolMOS™ C3 technology, which enhances performance in terms of efficiency and switching speed.
4. Package: Available in a TO-220 package, which is common for power devices due to its effective heat dissipation.
5. Applications: Suitable for use in applications such as switch-mode power supplies, power factor correction, and other high-voltage applications.
6. Thermal Resistance: Features a low thermal resistance from junction to case (R_thJC), aiding in thermal management.
7. Switching Performance: Offers fast switching speeds, contributing to increased efficiency in power conversion.
These features make the SPP11N60C3 a versatile choice for various power management solutions.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. A voltage applied to the gate determines whether the MOSFET is in the on or off state.
2. Drain (D): This is the pin where the main current flows out of the MOSFET when it is in the on state. It is connected to the load that the MOSFET is controlling.
3. Source (S): This is the pin through which the main current enters the MOSFET. It is typically connected to the ground or the negative side of the power supply in a circuit.
The SPP11N60C3 is commonly used in applications such as power supplies, motor drives, and other circuits requiring efficient high-voltage and high-current switching.
Manufacturer
Application
1. Switching Power Supplies: Utilized in SMPS for high-efficiency power conversion.
2. Motor Drives: Employed in controlling DC and AC motors.
3. Lighting Systems: Often used in electronic ballasts for lighting.
4. Renewable Energy Systems: Applied in solar inverters and other renewable energy applications.
5. Industrial Electronics: Used in industrial automation and control systems.
6. Consumer Electronics: Integrated into devices like TVs and audio systems for efficient power management.
These applications benefit from the MOSFET's capability to handle high voltages and currents effectively.