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SSM3K333R
+BOMMOSFETs
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Nhà sản xuấtToshiba
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Ông. Phần #SSM3K333R
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Description
The SSM3K333R is a N-channel MOSFET from Toshiba, designed for high-speed switching in low-voltage applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 0.3Ω (max 0.5Ω) at VGS = 4.5V, ensuring efficient power handling.
- Compact Package (SOT-23): Ideal for space-constrained designs.
- Fast Switching: Optimized for high-frequency circuits.
- Low Threshold Voltage (VGS(th)): ~0.5V, suitable for logic-level control (1.8V–5V).
Common uses include load switching, power management, and portable electronics (e.g., smartphones, IoT devices).
Specs Summary:
- VDSS: 30V
- ID: 2.5A (continuous)
- Power Dissipation: 1W
For detailed performance curves, refer to Toshiba’s datasheet.
- Low On-Resistance (RDS(on)): Typically 0.3Ω (max 0.5Ω) at VGS = 4.5V, ensuring efficient power handling.
- Compact Package (SOT-23): Ideal for space-constrained designs.
- Fast Switching: Optimized for high-frequency circuits.
- Low Threshold Voltage (VGS(th)): ~0.5V, suitable for logic-level control (1.8V–5V).
Common uses include load switching, power management, and portable electronics (e.g., smartphones, IoT devices).
Specs Summary:
- VDSS: 30V
- ID: 2.5A (continuous)
- Power Dissipation: 1W
For detailed performance curves, refer to Toshiba’s datasheet.
Equivalent
Equivalent products to the SSM3K333R (N-channel MOSFET) include:
- DMN3010LSS (Rohm)
- 2N7002DW (ON Semiconductor)
- BSS138DW (NXP/Infineon)
- FDN337N (ON Semiconductor)
These alternatives offer similar specifications (30V, ~0.5A, SOT-363 package). Verify exact parameters (RDS(on), VGS(th)) for your application.
- DMN3010LSS (Rohm)
- 2N7002DW (ON Semiconductor)
- BSS138DW (NXP/Infineon)
- FDN337N (ON Semiconductor)
These alternatives offer similar specifications (30V, ~0.5A, SOT-363 package). Verify exact parameters (RDS(on), VGS(th)) for your application.
Features
The SSM3K333R is a N-channel MOSFET from Toshiba, designed for low-voltage, high-speed switching applications. Key features:
- Voltage Rating: 30V (Drain-Source)
- Current Rating: 6.5A (Drain)
- Low On-Resistance: 33mΩ (max) @ VGS=10V
- Fast Switching: Low gate charge (Qg=8.5nC typ)
- Compact Package: SOP-8 (SMV) for space-saving designs
- Low Threshold Voltage: VGS(th)=1V (typ) for efficient low-voltage operation
Ideal for power management, load switching, and DC-DC converters in portable devices.
- Voltage Rating: 30V (Drain-Source)
- Current Rating: 6.5A (Drain)
- Low On-Resistance: 33mΩ (max) @ VGS=10V
- Fast Switching: Low gate charge (Qg=8.5nC typ)
- Compact Package: SOP-8 (SMV) for space-saving designs
- Low Threshold Voltage: VGS(th)=1V (typ) for efficient low-voltage operation
Ideal for power management, load switching, and DC-DC converters in portable devices.
Pinout
The SSM3K333R is a 3-pin P-channel MOSFET designed for power switching applications.
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (output side).
3. Source (S): Connects to the power supply (input side).
Key Features:
- Low on-resistance (RDS(on)).
- High-speed switching.
- Used in power management circuits, load switches, and battery protection.
Compact and efficient, it's commonly found in portable electronics.
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (output side).
3. Source (S): Connects to the power supply (input side).
Key Features:
- Low on-resistance (RDS(on)).
- High-speed switching.
- Used in power management circuits, load switches, and battery protection.
Compact and efficient, it's commonly found in portable electronics.
Package
The SSM3K333R is a P-channel MOSFET in a small surface-mount package type SOT-23. It features low on-resistance and is commonly used for power switching in portable devices. The SOT-23 package has three pins and is compact, making it suitable for space-constrained applications.
