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STD100N10F7
+BOMMOSFET N CH 100V 80A DPAK
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STD100N10F7
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Bảng dữ liệu STD100N10F7 DataSheet
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Gói TO-252-3
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Có sẵn3821
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ VII |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 80A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 8mOhm @ 40A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 61 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4369 pF @ 50 V |
| Power Dissipation (Max) | 120W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Tổng quan
Description
Key features of the STD100N10F7 include:
- Voltage Rating: 100V drain-source voltage (V_DS).
- Current Rating: Continuous drain current of 100A at 25°C.
- Low On-Resistance: Approximately 0.005Ω, minimizing energy loss.
- Package: Available in a DPAK package, which is compact and suitable for surface mounting.
The device is commonly used in power management, motor control, DC-DC converters, and synchronous rectification in power supplies. Its robust design and thermal characteristics make it suitable for high-frequency applications and environments demanding reliable performance. Overall, the STD100N10F7 is valued for its efficiency, compact form factor, and thermal management attributes.
Equivalent
1. IRF540N - from Vishay.
2. FQP30N06L - from ON Semiconductor.
3. NTD4906N - also from ON Semiconductor.
4. IPP110N10N3 G - from Infineon Technologies.
Make sure to compare parameters like RDS(on), VGS, and thermal characteristics to ensure compatibility.
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) of 100V.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 100A.
3. R_DS(on): The on-state resistance is very low, typically around 0.011 ohms, which ensures high efficiency and low power loss.
4. Fast Switching: It is designed for fast switching, which is beneficial in high-frequency applications.
5. Package: It is available in a DPAK package, which is suitable for surface mounting.
6. Temperature Range: Operates efficiently within a wide temperature range, making it versatile for various environments.
7. Enhanced Ruggedness: Designed to withstand high power and stress conditions, which improves reliability.
These features make the STD100N10F7 suitable for applications in power management, automotive, industrial systems, and consumer electronics where efficient power handling is essential.
Pinout
1. Gate (G): This pin controls the switching of the MOSFET by applying voltage to it.
2. Drain (D): This pin is connected to the load, and it allows current to flow through the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground in most applications, and it serves as the return path for the current flowing through the device.
4. Tab: The mounting tab is also connected to the Drain. It helps in thermal dissipation and is often connected to the same potential as the Drain in circuit designs.
The STD100N10F7 is designed to handle high current and voltage, making it suitable for applications like DC-DC converters, motor drives, and other power management systems.
Manufacturer
Application
1. Switching Power Supplies: Utilized in the design of highly efficient power converters and inverters.
2. Motor Control: Ideal for controlling motors in industrial and automotive applications.
3. Lighting Systems: Employed in LED lighting circuits for efficient power management.
4. Battery Management: Used in battery protection and management systems for electric vehicles and portable devices.
5. DC-DC Converters: Integral in voltage regulation and conversion systems.
Its high-speed switching capabilities and low on-resistance make it suitable for these demanding applications.