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STD10N60M2
+BOMMOSFET N-CH 600V 7.5A DPAK
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STD10N60M2
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Bảng dữ liệu STD10N60M2 DataSheet
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Gói TO-252-3
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Có sẵn3159
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 7.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 600mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13.5 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 400 pF @ 100 V |
| PowerDissipation(Max) | 85W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Tổng quan
Description
The STD10N60M2 is a power MOSFET transistor designed for high-efficiency switching applications. It belongs to the N-channel MOSFET category and is part of STMicroelectronics' MDmesh™ M2 series, known for its super-junction technology that enhances performance in terms of lower on-resistance and high-speed switching. With a voltage rating of 600V and a current capability of 10A, this transistor is suitable for use in power supplies, converters, and motor control systems.
Key features include a low gate charge, which minimizes power losses and allows for efficient operation at higher frequencies. Its robust design supports high avalanche energy ratings, making it reliable in demanding environments. The STD10N60M2 is housed in a standard TO-220 package, allowing for easy integration into various circuit boards.
Overall, the STD10N60M2 is favored for its energy efficiency, reliability, and capability to handle high-voltage and high-current applications, making it a versatile choice for designers focusing on power management solutions.
Key features include a low gate charge, which minimizes power losses and allows for efficient operation at higher frequencies. Its robust design supports high avalanche energy ratings, making it reliable in demanding environments. The STD10N60M2 is housed in a standard TO-220 package, allowing for easy integration into various circuit boards.
Overall, the STD10N60M2 is favored for its energy efficiency, reliability, and capability to handle high-voltage and high-current applications, making it a versatile choice for designers focusing on power management solutions.
Equivalent
The STD10N60M2 is a power MOSFET manufactured by STMicroelectronics. Equivalent products from other manufacturers may include the IRF540N from Infineon or Vishay, the FQP10N60C from ON Semiconductor, and the NTE2973 from NTE Electronics. Ensure to compare the specifications such as voltage, current, Rds(on), and package type to confirm compatibility for your application.
Features
The STD10N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. Key features include:
1. N-channel MOSFET: This device is an N-channel MOSFET, which is suitable for high-speed switching.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_ds) of 600V and a continuous drain current (I_d) of about 10A.
3. Low On-Resistance: The MOSFET offers low on-state resistance, which reduces power loss and increases efficiency during operation.
4. Second Generation MDmesh Technology: Utilizes advanced technology to enhance performance, particularly in terms of fast switching speeds and reduced power losses.
5. TO-252 Package: Comes in a TO-252 (DPAK) package, which is compact and suitable for surface-mount applications.
6. Enhanced Robustness: Designed for better ruggedness and reliability under high voltage and current conditions.
7. Applications: Commonly used in power supply units, converters, and other high-efficiency switching applications.
These features make the STD10N60M2 suitable for high-voltage and high-efficiency power switching applications.
1. N-channel MOSFET: This device is an N-channel MOSFET, which is suitable for high-speed switching.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_ds) of 600V and a continuous drain current (I_d) of about 10A.
3. Low On-Resistance: The MOSFET offers low on-state resistance, which reduces power loss and increases efficiency during operation.
4. Second Generation MDmesh Technology: Utilizes advanced technology to enhance performance, particularly in terms of fast switching speeds and reduced power losses.
5. TO-252 Package: Comes in a TO-252 (DPAK) package, which is compact and suitable for surface-mount applications.
6. Enhanced Robustness: Designed for better ruggedness and reliability under high voltage and current conditions.
7. Applications: Commonly used in power supply units, converters, and other high-efficiency switching applications.
These features make the STD10N60M2 suitable for high-voltage and high-efficiency power switching applications.
Pinout
The STD10N60M2 is an N-channel MOSFET manufactured by STMicroelectronics. It typically comes in a DPAK (TO-252) package, which has three pins and a tab. Here’s a concise breakdown of the pin functions:
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, the MOSFET is turned on, allowing current to flow between the drain and source.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is in the on state. It is connected to the load in most applications.
3. Source (S): The source is where the current enters the MOSFET. It is typically connected to the ground or negative voltage supply in most circuits.
4. Tab (Drain): The metal tab is also electrically connected to the drain and provides a path for heat dissipation.
The STD10N60M2 is used in various applications, including power supplies and motor control, where efficient switching and power management is required.
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, the MOSFET is turned on, allowing current to flow between the drain and source.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is in the on state. It is connected to the load in most applications.
3. Source (S): The source is where the current enters the MOSFET. It is typically connected to the ground or negative voltage supply in most circuits.
4. Tab (Drain): The metal tab is also electrically connected to the drain and provides a path for heat dissipation.
The STD10N60M2 is used in various applications, including power supplies and motor control, where efficient switching and power management is required.
Manufacturer
The STD10N60M2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company known for designing and manufacturing a wide range of electronic components and systems. They produce integrated devices and solutions for a variety of applications, including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is recognized for its expertise in developing advanced technologies and providing innovative solutions that meet the diverse needs of its customers worldwide.
Application
The STD10N60M2 is a power MOSFET designed for high-voltage applications. It is commonly used in:
1. Switching Power Supplies: Efficient for converting electrical power to the desired voltage or current level.
2. Motor Control: Ideal for controlling speed and torque in DC motors and other motor-driven systems.
3. LED Drivers: Used in circuits that power LED lighting systems.
4. Inverters: Suitable for converting DC to AC power in various electronic devices.
5. Power Factor Correction (PFC): Helps enhance energy efficiency in electrical systems.
6. Converters and Adapters: Utilized in AC-DC converters for various electronic devices.
These applications benefit from the MOSFET's high efficiency, fast switching, and robustness.
1. Switching Power Supplies: Efficient for converting electrical power to the desired voltage or current level.
2. Motor Control: Ideal for controlling speed and torque in DC motors and other motor-driven systems.
3. LED Drivers: Used in circuits that power LED lighting systems.
4. Inverters: Suitable for converting DC to AC power in various electronic devices.
5. Power Factor Correction (PFC): Helps enhance energy efficiency in electrical systems.
6. Converters and Adapters: Utilized in AC-DC converters for various electronic devices.
These applications benefit from the MOSFET's high efficiency, fast switching, and robustness.
Package
The STD10N60M2 is typically available in a DPAK (TO-252) package type.
