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STD2NK100Z
+BOMMOSFET N-CH 1000V 1.85A DPAK
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STD2NK100Z
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Bảng dữ liệu STD2NK100Z DataSheet
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Có sẵn6886
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | SuperMESH™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 1.85A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 8.5Ohm @ 900mA, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 16 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 499 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| BaseProductNumber | STD2NK100 |
Tổng quan
Description
The STD2NK100Z is a high-voltage N-channel MOSFET designed for various power applications. It features a breakdown voltage of 100V and a continuous drain current of up to 2.0A, making it suitable for use in power management, switching applications, and motor control. With a low on-resistance (R_DS(on)) of approximately 0.1 ohms, it ensures efficient operation by minimizing power losses during conduction.
The device is housed in a TO-220 package, facilitating effective heat dissipation, which is crucial for maintaining performance under load. Its fast switching capabilities enhance efficiency in high-frequency applications. The STD2NK100Z is also characterized by its robustness against thermal and electrical stress, ensuring reliable operation in demanding environments.
Overall, this MOSFET is an ideal choice for designers seeking performance and reliability in their electronic circuits.
The device is housed in a TO-220 package, facilitating effective heat dissipation, which is crucial for maintaining performance under load. Its fast switching capabilities enhance efficiency in high-frequency applications. The STD2NK100Z is also characterized by its robustness against thermal and electrical stress, ensuring reliable operation in demanding environments.
Overall, this MOSFET is an ideal choice for designers seeking performance and reliability in their electronic circuits.
Equivalent
The STD2NK100Z is a N-channel MOSFET with a maximum drain-source voltage of 100V and a continuous drain current rating of 2A. Equivalent products include the IRF730, STP2N100, and FQP2N100. Ensure to check specifications such as RDS(on), gate threshold voltage, and package type to confirm compatibility for your specific application.
Features
The STD2NK100Z is a high-performance N-channel MOSFET designed for various applications, including power switching and motor control. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (Id) of up to 2A, with a pulsed drain current (Id) of 10A.
3. Low Rds(on): It offers a low on-resistance (Rds(on)) typically around 0.18 ohms at Vgs = 10V, enhancing efficiency and reducing thermal dissipation.
4. Fast Switching: The device supports fast switching capabilities, ideal for high-frequency applications.
5. TO-220 Package: It comes in a TO-220 package, which provides excellent thermal performance and ease of mounting.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 2V to 4V, allowing for easy drive with common logic levels.
These features make the STD2NK100Z versatile for various electronic circuits, ensuring reliable performance in demanding environments.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (Id) of up to 2A, with a pulsed drain current (Id) of 10A.
3. Low Rds(on): It offers a low on-resistance (Rds(on)) typically around 0.18 ohms at Vgs = 10V, enhancing efficiency and reducing thermal dissipation.
4. Fast Switching: The device supports fast switching capabilities, ideal for high-frequency applications.
5. TO-220 Package: It comes in a TO-220 package, which provides excellent thermal performance and ease of mounting.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 2V to 4V, allowing for easy drive with common logic levels.
These features make the STD2NK100Z versatile for various electronic circuits, ensuring reliable performance in demanding environments.
Pinout
The STD2NK100Z is a power MOSFET with a pin count of 3. It features the following pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current enters the device. In an N-channel MOSFET like the STD2NK100Z, it is connected to the load.
3. Source (S): This pin is where the current exits the device and is typically connected to ground or the negative side of the power source.
The STD2NK100Z is designed for high-voltage applications, with a maximum drain-source voltage of 100V and a continuous drain current of up to 2A. It is commonly used in power management and switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current enters the device. In an N-channel MOSFET like the STD2NK100Z, it is connected to the load.
3. Source (S): This pin is where the current exits the device and is typically connected to ground or the negative side of the power source.
The STD2NK100Z is designed for high-voltage applications, with a maximum drain-source voltage of 100V and a continuous drain current of up to 2A. It is commonly used in power management and switching applications.
Manufacturer
The STD2NK100Z is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor products and solutions, including integrated circuits, discrete devices, and sensors. The company serves various industries, such as automotive, industrial, personal electronics, and communications, providing innovative technologies that enable energy-efficient and high-performance applications. Established through the merger of SGS Microelettronica and Thomson Semiconducteurs in 1987, STMicroelectronics has a strong presence in the market, with a commitment to research and development, sustainable practices, and advanced manufacturing processes. The STD2NK100Z itself is a N-channel MOSFET, commonly used in power applications due to its efficiency and reliability.
Application
The STD2NK100Z is a high-voltage N-channel MOSFET commonly used in various applications, including:
1. Switching Power Supplies: Enhances efficiency in DC-DC converters.
2. Motor Control: Drives motors in industrial automation and robotics.
3. Power Management: Used in power distribution for energy efficiency in electronics.
4. Lighting Control: Powers LED drivers and dimming circuits.
5. Telecommunications: Acts as a switch in signal processing.
6. Consumer Electronics: Found in devices requiring power regulation.
Its low on-resistance and high voltage capability make it suitable for these applications, ensuring reliable performance.
1. Switching Power Supplies: Enhances efficiency in DC-DC converters.
2. Motor Control: Drives motors in industrial automation and robotics.
3. Power Management: Used in power distribution for energy efficiency in electronics.
4. Lighting Control: Powers LED drivers and dimming circuits.
5. Telecommunications: Acts as a switch in signal processing.
6. Consumer Electronics: Found in devices requiring power regulation.
Its low on-resistance and high voltage capability make it suitable for these applications, ensuring reliable performance.
Package
The STD2NK100Z is packaged in a TO-220 format. This package type provides effective heat dissipation and is commonly used for power MOSFETs in various applications.
