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STD3NK90ZT4
+BOMMOSFET N-CH 900V 3A DPAK
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STD3NK90ZT4
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Bảng dữ liệu STD3NK90ZT4 DataSheet
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Gói TO-252-3
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Có sẵn2524
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.8Ohm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 22.7 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 590 pF @ 25 V |
| PowerDissipation(Max) | 90W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252 (D-Pak) |
Tổng quan
Description
The STD3NK90ZT4 is an N-channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. It is designed for high-efficiency applications and typically used in power management and conversion systems. The device features a robust structure that allows it to handle high levels of current and voltage, making it suitable for use in demanding environments. It offers a low on-resistance, which minimizes energy loss and heat generation during operation, thereby enhancing the overall efficiency of the system in which it is deployed.
Key specifications of the STD3NK90ZT4 include a drain-source voltage (V_DS) of 900V, a drain current (I_D) of 3A, and a low gate charge, which reduces the power required to drive the MOSFET. The component is typically housed in a TO-220 package, providing a compact yet durable solution for electronic circuit designs. Its high voltage capacity makes it particularly useful for applications such as power supplies, DC-DC converters, and motor drivers.
Key specifications of the STD3NK90ZT4 include a drain-source voltage (V_DS) of 900V, a drain current (I_D) of 3A, and a low gate charge, which reduces the power required to drive the MOSFET. The component is typically housed in a TO-220 package, providing a compact yet durable solution for electronic circuit designs. Its high voltage capacity makes it particularly useful for applications such as power supplies, DC-DC converters, and motor drivers.
Equivalent
The STD3NK90ZT4 is an N-channel MOSFET produced by STMicroelectronics. Some equivalent MOSFETs that could be considered include:
1. IRF840 by Infineon Technologies
2. FQA9N90C by ON Semiconductor
3. 2SK3568 by Toshiba
These equivalents may vary slightly in specifications, so it's important to verify the electrical characteristics and package compatibility for your specific application.
1. IRF840 by Infineon Technologies
2. FQA9N90C by ON Semiconductor
3. 2SK3568 by Toshiba
These equivalents may vary slightly in specifications, so it's important to verify the electrical characteristics and package compatibility for your specific application.
Features
The STD3NK90ZT4 is an N-channel MOSFET from STMicroelectronics. It is part of the MDmesh™ series, known for high voltage capability. Key features include:
1. Voltage Rating: It has a high breakdown voltage, typically around 900V, which makes it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current of up to 3A.
3. Low On-Resistance: It features a low R_DS(on), which minimizes power loss and enhances efficiency.
4. Fast Switching: The device is designed for fast switching, reducing switching losses and improving performance in power conversion applications.
5. Gate Charge: It has a low gate charge, which reduces the driving power requirements.
6. Package: The MOSFET is available in a TO-252 (DPAK) package, suitable for surface-mount technology.
7. Operating Temperature: It supports a wide operating temperature range, making it reliable for various environmental conditions.
These features make the STD3NK90ZT4 suitable for applications such as power supplies, converters, and other high-voltage circuits.
1. Voltage Rating: It has a high breakdown voltage, typically around 900V, which makes it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current of up to 3A.
3. Low On-Resistance: It features a low R_DS(on), which minimizes power loss and enhances efficiency.
4. Fast Switching: The device is designed for fast switching, reducing switching losses and improving performance in power conversion applications.
5. Gate Charge: It has a low gate charge, which reduces the driving power requirements.
6. Package: The MOSFET is available in a TO-252 (DPAK) package, suitable for surface-mount technology.
7. Operating Temperature: It supports a wide operating temperature range, making it reliable for various environmental conditions.
These features make the STD3NK90ZT4 suitable for applications such as power supplies, converters, and other high-voltage circuits.
Pinout
The STD3NK90ZT4 is an N-channel MOSFET produced by STMicroelectronics. It is typically housed in a DPAK (TO-252) package. This MOSFET features three pins:
1. Gate (G): Used to control the MOSFET. Applying a voltage to this pin switches the device on or off.
2. Drain (D): The pin where current flows out from, connected to the load.
3. Source (S): The pin where current flows into, typically connected to ground.
Additionally, the tab or heat sink of the package is usually connected to the drain. The STD3NK90ZT4 is designed for high-voltage, fast-switching applications and can handle a maximum drain-source voltage (V_ds) of 900V and a continuous drain current (I_d) of 2.7A. It is often used in applications such as power conversion, switching regulators, and motor control.
1. Gate (G): Used to control the MOSFET. Applying a voltage to this pin switches the device on or off.
2. Drain (D): The pin where current flows out from, connected to the load.
3. Source (S): The pin where current flows into, typically connected to ground.
Additionally, the tab or heat sink of the package is usually connected to the drain. The STD3NK90ZT4 is designed for high-voltage, fast-switching applications and can handle a maximum drain-source voltage (V_ds) of 900V and a continuous drain current (I_d) of 2.7A. It is often used in applications such as power conversion, switching regulators, and motor control.
Manufacturer
The STD3NK90ZT4 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products, including discrete and analog devices, microcontrollers, sensors, and integrated circuits. The company serves various markets, including automotive, industrial, personal electronics, communications equipment, and the Internet of Things (IoT). Headquartered in Geneva, Switzerland, STMicroelectronics operates globally with a strong focus on research and development, aiming to create innovative solutions that improve energy efficiency and enhance everyday life through technology.
Application
The STD3NK90ZT4 is an N-channel MOSFET designed for high-voltage applications. Its primary application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Suitable for controlling motors in industrial and automotive applications due to its high-speed switching capabilities.
3. Lighting Systems: Employed in driving circuits for LED and other lighting technologies.
4. Telecommunications: Utilized in equipment requiring reliable high-frequency switching.
5. Consumer Electronics: Used in power management and signal processing applications.
Its robust design and efficiency make it ideal for environments requiring high power density and reliability.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Suitable for controlling motors in industrial and automotive applications due to its high-speed switching capabilities.
3. Lighting Systems: Employed in driving circuits for LED and other lighting technologies.
4. Telecommunications: Utilized in equipment requiring reliable high-frequency switching.
5. Consumer Electronics: Used in power management and signal processing applications.
Its robust design and efficiency make it ideal for environments requiring high power density and reliability.
Package
The STD3NK90ZT4 is an N-channel MOSFET transistor, and it comes in a DPAK package (also known as TO-252). This type of package is a surface-mount device commonly used for power semiconductor devices, providing efficient heat dissipation and compact board space utilization.
