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STD7ANM60N
+BOMMOSFET N-CH 600V 5A DPAK
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STD7ANM60N
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Bảng dữ liệu STD7ANM60N DataSheet
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Gói TO-252-3
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Có sẵn6324
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, MDmesh™ II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 900mOhm @ 2.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 363 pF @ 50 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Tổng quan
Description
Typically, introductory lessons would provide a background on the subject, highlight its relevance in real-world applications, and outline the methodologies or tools employed in the course. Additionally, students might be briefed on assessment methods, required readings, and practical components such as laboratories or projects.
For precise details, one would typically need to refer to the syllabus or course catalog provided by the institution offering "STD7ANM60N" to understand its specific content and focus areas.
Equivalent
1. Infineon's IPD60R1K4CE
2. Vishay's SIHP6N60E
3. ON Semiconductor's NDD03N60ZT4G
4. Fairchild's FQP7N60C
Make sure to verify the specifications such as voltage rating, current handling, and package type to ensure compatibility.
Features
1. N-Channel MOSFET: Designed for high-speed switching applications.
2. VDSS: It has a drain-source voltage (VDSS) rating of 600V, making it suitable for high-voltage applications.
3. Current Rating: The device can handle a continuous drain current up to 7A.
4. Low On-Resistance: It offers low on-resistance, which helps reduce power loss and improve efficiency.
5. Fast Switching: Features fast switching speeds for improved performance in various circuits.
6. TO-252 Package: Comes in a DPAK (TO-252) package, which is suitable for surface-mount technology.
7. Applications: Commonly used in power supplies, converters, and other applications requiring efficient voltage regulation and switching.
These features make the STD7ANM60N suitable for various electronic applications that demand high efficiency and reliability.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the terminal through which the main current flows into the device when it is in the 'on' state.
3. Source (S): This pin is the terminal through which the main current flows out of the device when it is in the 'on' state.
4. Tab: The tab is usually connected to the drain and is used for heat dissipation. It helps in mounting the MOSFET onto a heatsink.
The STD7ANM60N is designed for high-efficiency switching applications, typically used in power management, motor control, and other high-speed switching applications.
Manufacturer
Application
1. Switching Power Supplies: Used in power converters, inverters, and voltage regulation modules due to its high efficiency and fast switching capabilities.
2. Motor Control: Ideal for driving motors and actuators in industrial and automotive applications.
3. LED Lighting: Provides efficient power management for LED lighting systems.
4. Battery Management: Utilized in battery charging and protection circuits for efficient energy handling.
5. Load Switching: Suitable for high-speed switching applications in consumer electronics and computing.
These applications leverage its low on-resistance and high-speed switching to optimize performance.