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STF10NM60N
+BOMMOSFET N-CH 600V 10A TO220FP
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STF10NM60N
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Bảng dữ liệu STF10NM60N DataSheet
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Gói TO-220F
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Có sẵn5252
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 550mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 540 pF @ 50 V |
| PowerDissipation(Max) | 25W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Tổng quan
Description
Key features of the STF10NM60N include:
- Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 600V.
- Current Rating: It supports a continuous drain current (I_D) of 10A, making it suitable for moderate power applications.
- On-Resistance: The device features a low on-resistance (R_DS(on)) of around 0.55 ohms, which contributes to minimizing power loss during operation.
- Package Type: Typically available in a TO-220 package, which offers good thermal dissipation characteristics.
The STF10NM60N is commonly used in power supply circuits, motor controls, and other industrial and consumer applications where efficient power management is critical. Its robust design and reliable performance make it a popular choice for engineers and designers in various electronic applications.
Equivalent
1. IRF540N
2. STP10NK60Z
3. FDPF7N60NZ
4. FQP11N60C
These equivalents may vary based on specific application requirements, such as voltage, current ratings, and package type. Always check datasheets to ensure compatibility with your design needs.
Features
1. Drain-Source Voltage (Vds): Capable of handling up to 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current (Id): Supports up to 9.5A, allowing for substantial current flow.
3. RDS(on): The on-resistance is typically 0.85 ohms, contributing to lower conduction losses.
4. Total Gate Charge (Qg): Approximately 41 nC, which helps in achieving fast switching speeds.
5. Package: Comes in a TO-220 package, offering a balance between performance and size for heat dissipation.
6. Temperature Range: Operates efficiently within a wide temperature range, enhancing reliability in varying environments.
7. Applications: Ideal for use in applications like power supplies, motor control, and converters.
Overall, the STF10NM60N offers a combination of high voltage, current handling, and fast switching, making it versatile for various power management tasks.
Pinout
1. Gate (G): This pin is responsible for turning the MOSFET on or off. By applying a voltage to the gate, the device is made conductive or non-conductive between the drain and source.
2. Drain (D): The drain is the terminal through which the current enters the MOSFET when it is in the on-state. The drain is typically connected to the higher voltage end of the load.
3. Source (S): The source is the terminal through which current exits the MOSFET. It is usually connected to the ground or the lower voltage side of the circuit.
The STF10NM60N is typically used in applications that require high efficiency and fast switching, such as power supplies, converters, and motor control. It is designed to handle a maximum drain-source voltage of 600V and a continuous drain current of 10A.
Manufacturer
Application
1. Switching Power Supplies: Used for efficient power conversion in SMPS.
2. Motor Control: Ideal for controlling motors in industrial and consumer electronics.
3. Lighting Systems: Utilized in LED and HID lighting for power regulation.
4. Inverters: Employed in solar inverters for converting DC to AC.
5. Battery Chargers: Suitable for charging circuits in automotive and consumer products.
6. Audio Amplifiers: Used in class D amplifiers for its efficient switching characteristics.
7. UPS Systems: Provides reliable power switching in backup power solutions.
These applications leverage the MOSFET's fast switching and high efficiency.