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STF24NM60N
+BOMMOSFET N-CH 600V 17A TO220FP
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STF24NM60N
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Bảng dữ liệu STF24NM60N DataSheet
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Có sẵn19970
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 190mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1400 pF @ 50 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Tổng quan
Description
The STF24NM60N is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various electronic applications requiring efficient power management. This MOSFET is known for its high-speed switching capabilities and low on-resistance, which enhance its efficiency and thermal performance. It operates with a maximum drain-source voltage (V_DS) of 600V and can handle a continuous drain current (I_D) of up to 24A. These features make it suitable for high-voltage applications such as power supplies, converters, and motor control systems.
The STF24NM60N also includes features like fast recovery body diode and avalanche ruggedness, which contribute to its reliability in demanding environments. It typically comes in a TO-220 package, which provides a good balance between thermal performance and compact size. This MOSFET is often used in applications that require low power loss and efficient voltage regulation, delivering improved performance in both consumer and industrial electronics.
The STF24NM60N also includes features like fast recovery body diode and avalanche ruggedness, which contribute to its reliability in demanding environments. It typically comes in a TO-220 package, which provides a good balance between thermal performance and compact size. This MOSFET is often used in applications that require low power loss and efficient voltage regulation, delivering improved performance in both consumer and industrial electronics.
Equivalent
The STF24NM60N is a power MOSFET. Equivalent products with similar specifications might include the IRF540N, IRFP460, or NTE2395. However, when choosing an equivalent, you should ensure the substitute matches key parameters such as voltage rating, current capacity, Rds(on), and package type to fit your specific application requirements. Always consult the datasheets for precise comparisons.
Features
The STF24NM60N is a N-channel MOSFET known for its high efficiency and optimized performance in switching applications. Here are its key features:
1. Drain-Source Voltage (Vds): 600V, which makes it suitable for high-voltage applications.
2. Continuous Drain Current (Id): 20A, allowing it to handle moderate current loads.
3. RDS(on): Max 0.18 Ohms at 10V gate-source voltage, indicating low on-resistance for efficient operation.
4. Total Gate Charge (Qg): Approximately 52nC, which ensures fast switching speeds.
5. Package Type: TO-220FP, providing good thermal performance and easy mounting.
6. Thermal Resistance Junction-to-Ambient (RθJA): Designed for effective heat dissipation.
7. Enhanced ESD Capability: Robust against electrostatic discharge, enhancing reliability.
8. Applications: Ideal for use in power supplies, motor control, lighting, and other high-voltage, high-efficiency environments.
9. Technology: Utilizes MDmesh technology for improved performance over standard MOSFETs.
These features make the STF24NM60N a versatile and reliable choice for various industrial and consumer electronics applications.
1. Drain-Source Voltage (Vds): 600V, which makes it suitable for high-voltage applications.
2. Continuous Drain Current (Id): 20A, allowing it to handle moderate current loads.
3. RDS(on): Max 0.18 Ohms at 10V gate-source voltage, indicating low on-resistance for efficient operation.
4. Total Gate Charge (Qg): Approximately 52nC, which ensures fast switching speeds.
5. Package Type: TO-220FP, providing good thermal performance and easy mounting.
6. Thermal Resistance Junction-to-Ambient (RθJA): Designed for effective heat dissipation.
7. Enhanced ESD Capability: Robust against electrostatic discharge, enhancing reliability.
8. Applications: Ideal for use in power supplies, motor control, lighting, and other high-voltage, high-efficiency environments.
9. Technology: Utilizes MDmesh technology for improved performance over standard MOSFETs.
These features make the STF24NM60N a versatile and reliable choice for various industrial and consumer electronics applications.
Pinout
The STF24NM60N is an N-channel MOSFET produced by STMicroelectronics. It typically comes in a TO-220 package, which is a standard package type for power semiconductors. The pin count for the TO-220 package of the STF24NM60N is three. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate regulates the current flow between the drain and source.
2. Drain (D): Current flows through this pin from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This is the pin through which current exits the MOSFET after flowing from the drain.
Overall, the STF24NM60N is designed for high-efficiency power switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate regulates the current flow between the drain and source.
2. Drain (D): Current flows through this pin from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This is the pin through which current exits the MOSFET after flowing from the drain.
Overall, the STF24NM60N is designed for high-efficiency power switching applications.
Manufacturer
The STF24NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor devices, including integrated circuits, discrete semiconductors, and MEMS (Micro-Electro-Mechanical Systems) sensors. It serves various industries, such as automotive, industrial, personal electronics, and communications equipment. The company is headquartered in Geneva, Switzerland, and is recognized as one of the leading players in the semiconductor industry.
Application
The STF24NM60N is a power MOSFET used in various applications due to its high efficiency and fast switching capabilities. Common application areas include:
1. Power Supply Units: Used in switching power supplies and adapters for efficient energy conversion.
2. Motor Control: Employed in motor drives for industrial and consumer applications.
3. Lighting: Utilized in LED lighting systems for efficient power management.
4. Inverters: Suitable for use in inverter circuits in renewable energy systems like solar inverters.
5. Audio Amplifiers: Helps in designing efficient audio amplifier circuits.
6. Battery Chargers: Used in fast charging circuits for electronic devices.
These applications leverage the MOSFET's ability to handle high voltages and current efficiently.
1. Power Supply Units: Used in switching power supplies and adapters for efficient energy conversion.
2. Motor Control: Employed in motor drives for industrial and consumer applications.
3. Lighting: Utilized in LED lighting systems for efficient power management.
4. Inverters: Suitable for use in inverter circuits in renewable energy systems like solar inverters.
5. Audio Amplifiers: Helps in designing efficient audio amplifier circuits.
6. Battery Chargers: Used in fast charging circuits for electronic devices.
These applications leverage the MOSFET's ability to handle high voltages and current efficiently.
Package
The STF24NM60N is packaged in a TO-220FP package, which is a fully isolated version of the standard TO-220 package often used for power transistors.
