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STF7N80K5
+BOMMOSFET N CH 800V 6A TO220FP
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STF7N80K5
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Bảng dữ liệu STF7N80K5 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | SuperMESH5™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 1.2Ohm @ 3A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 13.4 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 360 pF @ 100 V |
| PowerDissipation(Max) | 25W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
| Package/Case | TO-220-3 Full Pack |
| BaseProductNumber | STF7 |
Tổng quan
Description
With a low on-resistance (RDS(on)) of approximately 0.8Ω, it minimizes conduction losses, enhancing overall system performance. The device has a fast switching capability, which is beneficial for applications requiring rapid on-off control.
The STF7N80K5 is housed in a TO-220 package, enabling effective heat dissipation, and is compatible with various mounting and heatsinking solutions.
Its robust design and high thermal stability make it a reliable choice for demanding environments. Overall, the STF7N80K5 is well-suited for engineers seeking a high-voltage MOSFET that balances performance, efficiency, and thermal management.
Equivalent
Features
1. Voltage Rating: The device can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) of 7A at a case temperature of 25°C, allowing it to manage significant loads.
3. Low On-state Resistance: The MOSFET features a low R_DS(on) of approximately 0.8 ohms, which helps minimize power losses and improve efficiency.
4. Fast Switching: Designed for rapid switching speeds, it enhances performance in applications like switch-mode power supplies and inverters.
5. Thermal Performance: The package type, typically TO-220, allows for effective heat dissipation, supporting higher power applications.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V to 4V, facilitating easy drive circuitry.
Overall, the STF7N80K5 is suitable for high-voltage, medium-current applications requiring efficiency and reliability.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the main current flows. It connects to the load.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The STF7N80K5 is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 7A. It is commonly used in power supply circuits, motor drives, and other high-voltage applications.
Manufacturer
Application
1. Switching Power Supplies: For efficient voltage regulation and energy conversion.
2. Motor Drives: Inverters for controlling electric motors in industrial and automotive applications.
3. LED Drivers: For efficient driving of high-power LEDs.
4. DC-DC Converters: For voltage step-up or step-down in various electronics.
5. Power Management: In consumer electronics and renewable energy systems.
Its high voltage rating and low on-resistance make it suitable for high-efficiency designs.