Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | STMicroelectronics |
| Package / Case | Tube |
| Series | PowerMESH™ |
| Part Status | Active |
| Voltage - Collector Emitter Breakdown(Max) | 600 V |
| Current - Collector(Ic)(Max) | 11 A |
| Current - Collector Pulsed(Icm) | 50 A |
| Vce(on)(Max) @ Vge Ic | 2.5V @ 15V, 7A |
| Power - Max | 28 W |
| Switching Energy | 82µJ (on), 155µJ (off) |
| Input Type | Standard |
| Gate Charge | 34.4 nC |
| Td(on / off) @ 25°C | 22.5ns/116ns |
| Test Condition | 390V, 7A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 37 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Tổng quan
Description
STGF14NC60KD is an N-channel power MOSFET from STMicroelectronics (STGF14N60KD family). It is designed for high-voltage switching in power electronics.
- Key rating: around 600 V drain–source voltage; current and on-resistance depend on package and heatsinking.
- Technology: trench MOSFET for fast switching and rugged operation.
- Packaging: typically a surface-mount power package (e.g., D²PAK/TO-263 variant “KD”); verify exact variant in the datasheet.
- Applications: offline switch‑mode power supplies, PFC, inverters, DC‑DC converters, motor drives.
- Use notes: drive the gate with an appropriate Vgs (commonly up to 10 V), provide proper cooling, and use protection for inductive loads. Check the datasheet for exact Id, Rds(on), Vgs(th), switching speeds, and safe operating area.
If you need precise electrical figures (Id, Rds(on), packaging details), refer to the official STMicroelectronics datasheet for STGF14NC60KD.
- Key rating: around 600 V drain–source voltage; current and on-resistance depend on package and heatsinking.
- Technology: trench MOSFET for fast switching and rugged operation.
- Packaging: typically a surface-mount power package (e.g., D²PAK/TO-263 variant “KD”); verify exact variant in the datasheet.
- Applications: offline switch‑mode power supplies, PFC, inverters, DC‑DC converters, motor drives.
- Use notes: drive the gate with an appropriate Vgs (commonly up to 10 V), provide proper cooling, and use protection for inductive loads. Check the datasheet for exact Id, Rds(on), Vgs(th), switching speeds, and safe operating area.
If you need precise electrical figures (Id, Rds(on), packaging details), refer to the official STMicroelectronics datasheet for STGF14NC60KD.
Features
STGF14NC60KD is a 600 V, 14 A N-channel power IGBT in a D²PAK (TO-263) package. Key features:
- 600 V blocking voltage
- ~14 A continuous current
- N-channel trench-gate IGBT for fast switching
- Low Vce(sat) for reduced conduction losses
- Gate drive typical around 15 V (with suitable drive)
- Suitable for bridge/inverter, motor drive, and SMPS applications
- D²PAK surface-mount package for good thermal performance
Note: exact Vce(sat), switching losses, and thermal specs vary with conditions; consult the datasheet for precise numbers and safe operating ranges.
- 600 V blocking voltage
- ~14 A continuous current
- N-channel trench-gate IGBT for fast switching
- Low Vce(sat) for reduced conduction losses
- Gate drive typical around 15 V (with suitable drive)
- Suitable for bridge/inverter, motor drive, and SMPS applications
- D²PAK surface-mount package for good thermal performance
Note: exact Vce(sat), switching losses, and thermal specs vary with conditions; consult the datasheet for precise numbers and safe operating ranges.
Pinout
STGF14NC60KD is a 3‑lead IGBT (plus a metal mounting tab). The functional pins are:
- Pin 1 (left, facing device front): Gate (G) — control input
- Pin 2 (middle): Collector (C) — high‑voltage power terminal (also connected to the metal tab)
- Pin 3 (right): Emitter (E) — return/output
So electrically it has three terminals (G, C, E); the external metal tab is tied to the Collector.
- Pin 1 (left, facing device front): Gate (G) — control input
- Pin 2 (middle): Collector (C) — high‑voltage power terminal (also connected to the metal tab)
- Pin 3 (right): Emitter (E) — return/output
So electrically it has three terminals (G, C, E); the external metal tab is tied to the Collector.
Manufacturer
- Manufacturer: STMicroelectronics (ST)
- What kind of company: A European multinational semiconductor company (electronics manufacturer) headquartered in Switzerland, designing and producing a broad range of devices such as power semiconductors, MEMS, sensors, microcontrollers, and analog ICs. It is publicly traded on major exchanges (e.g., Euronext Paris/Milan and NYSE).
- What kind of company: A European multinational semiconductor company (electronics manufacturer) headquartered in Switzerland, designing and producing a broad range of devices such as power semiconductors, MEMS, sensors, microcontrollers, and analog ICs. It is publicly traded on major exchanges (e.g., Euronext Paris/Milan and NYSE).
Application
STGF14NC60KD is a high-voltage N-channel MOSFET (about 600 V, ~14 A). Common application areas include:
- Offline switch-mode power supplies (flyback/forward, buck/boost)
- AC-DC front ends and power adapters
- Solar inverters and battery chargers
- LED drivers and other high-voltage DC-DC stages
- Uninterruptible power supplies (UPS) and telecom power modules
- Motor control and drive circuits for small to medium motors
- Industrial automation power stages and smart-grid equipment
These use cases leverage its high voltage, fast switching, and efficiency in high-power PCB topologies.
- Offline switch-mode power supplies (flyback/forward, buck/boost)
- AC-DC front ends and power adapters
- Solar inverters and battery chargers
- LED drivers and other high-voltage DC-DC stages
- Uninterruptible power supplies (UPS) and telecom power modules
- Motor control and drive circuits for small to medium motors
- Industrial automation power stages and smart-grid equipment
These use cases leverage its high voltage, fast switching, and efficiency in high-power PCB topologies.
Package
The STGF14NC60KD IGBT is supplied in a TO-220 (3-lead) plastic through-hole package with a metal mounting tab.
