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STH2N120K5-2AG
+BOMMOSFET N-CH 1200V 1.5A H2PAK-2
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STH2N120K5-2AG
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Bảng dữ liệu STH2N120K5-2AG DataSheet
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Gói TO-263-3
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Có sẵn4293
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 1.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 10Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 4V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 5.3 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 124 pF @ 100 V |
| Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2Pak-2 |
Tổng quan
Description
The STH2N120K5-2AG is a high-voltage N-channel Power MOSFET from STMicroelectronics, designed for use in various power switching applications. It belongs to the MDmesh™ K5 series, known for its high efficiency and low power losses, making it suitable for energy-efficient systems. With a breakdown voltage of 1200V, this MOSFET can handle high voltage applications, providing robustness and reliability.
Key features include a low on-state resistance (R_DS(on)), which enhances performance by reducing conduction losses, and a fast switching speed that supports high-frequency operations. The device is encapsulated in a TO-220 package, offering good thermal performance and ease of mounting onto PCBs or heat sinks for better heat dissipation.
The STH2N120K5-2AG is commonly used in applications like power supplies, inverters, motor drives, and other industrial and consumer electronics where high voltage and efficiency are crucial. Its combination of high voltage capability, efficiency, and robust design makes it a versatile component in the field of power electronics.
Key features include a low on-state resistance (R_DS(on)), which enhances performance by reducing conduction losses, and a fast switching speed that supports high-frequency operations. The device is encapsulated in a TO-220 package, offering good thermal performance and ease of mounting onto PCBs or heat sinks for better heat dissipation.
The STH2N120K5-2AG is commonly used in applications like power supplies, inverters, motor drives, and other industrial and consumer electronics where high voltage and efficiency are crucial. Its combination of high voltage capability, efficiency, and robust design makes it a versatile component in the field of power electronics.
Equivalent
The STH2N120K5-2AG is an IGBT (Insulated Gate Bipolar Transistor) with specific electrical characteristics. Equivalent products would have similar voltage, current ratings, and switching speed. Possible equivalents include the STGW20H120DF2 from STMicroelectronics or the IKW15N120T2 from Infineon Technologies. When selecting an equivalent, ensure that parameters like voltage, current rating, package type, and thermal characteristics match the original specifications. Always consult datasheets to confirm compatibility.
Features
The STH2N120K5-2AG is a silicon power MOSFET designed for high-efficiency power management applications. Key features include:
1. N-Channel MOSFET: It is an N-channel device, which is typically used for high-speed switching.
2. High Voltage Rating: This MOSFET is rated for a maximum drain-source voltage (V_DS) of 1200V, making it suitable for high-voltage applications.
3. Low On-Resistance: The device offers low on-state resistance (R_DS(on)), which minimizes power losses and improves efficiency.
4. High Current Capability: It can handle continuous drain current, making it suitable for demanding power applications.
5. Advanced Gate Charge: Features a low gate charge, which reduces the effort required to drive the MOSFET, enhancing its efficiency in switching applications.
6. Robust Design: Built to withstand harsh conditions, offering reliability in demanding environments.
7. TO-247 Package: The device is available in a TO-247 package, which offers efficient heat dissipation and ease of mounting.
These features make the STH2N120K5-2AG ideal for applications requiring efficient power conversion and high-speed switching.
1. N-Channel MOSFET: It is an N-channel device, which is typically used for high-speed switching.
2. High Voltage Rating: This MOSFET is rated for a maximum drain-source voltage (V_DS) of 1200V, making it suitable for high-voltage applications.
3. Low On-Resistance: The device offers low on-state resistance (R_DS(on)), which minimizes power losses and improves efficiency.
4. High Current Capability: It can handle continuous drain current, making it suitable for demanding power applications.
5. Advanced Gate Charge: Features a low gate charge, which reduces the effort required to drive the MOSFET, enhancing its efficiency in switching applications.
6. Robust Design: Built to withstand harsh conditions, offering reliability in demanding environments.
7. TO-247 Package: The device is available in a TO-247 package, which offers efficient heat dissipation and ease of mounting.
These features make the STH2N120K5-2AG ideal for applications requiring efficient power conversion and high-speed switching.
Pinout
The STH2N120K5-2AG is a power MOSFET produced by STMicroelectronics. It comes in a TO-220 package and is designed for high-voltage, high-speed applications.
Pin Count:
The STH2N120K5-2AG has three pins.
Pin Functions:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate regulates the flow of current between the drain and source.
2. Drain (D): The drain is the terminal where the current enters the MOSFET. It is connected to the load in most applications.
3. Source (S): The source is the terminal where the current exits the MOSFET. It is typically connected to ground or the negative side of the supply in a circuit.
This MOSFET is part of the MDmesh K5 series, known for its low on-state resistance and high voltage capability, making it suitable for applications like power supplies, lighting, and motor control.
Pin Count:
The STH2N120K5-2AG has three pins.
Pin Functions:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate regulates the flow of current between the drain and source.
2. Drain (D): The drain is the terminal where the current enters the MOSFET. It is connected to the load in most applications.
3. Source (S): The source is the terminal where the current exits the MOSFET. It is typically connected to ground or the negative side of the supply in a circuit.
This MOSFET is part of the MDmesh K5 series, known for its low on-state resistance and high voltage capability, making it suitable for applications like power supplies, lighting, and motor control.
Manufacturer
The STH2N120K5-2AG is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products and solutions. The company operates in various sectors, including automotive, industrial, personal electronics, and communications equipment, providing products such as microcontrollers, sensors, power electronics, and more. STMicroelectronics is known for its innovation in semiconductor technology and has a significant presence in the global electronics market.
Application
The STH2N120K5-2AG is an N-channel power MOSFET designed for high-voltage applications. Its primary application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for increased efficiency and compactness.
2. Lighting: Suitable for LED lighting and high-intensity discharge lamps.
3. Motor Control: Employed in industrial motor drives and control circuits.
4. Renewable Energy: Utilized in solar inverters and wind turbine systems for efficient energy conversion.
5. Automotive: Applied in electric vehicle powertrains and onboard chargers.
6. Industrial Systems: Integrated into industrial automation and robotics for controlling high-power devices.
Its high voltage and current handling capabilities make it suitable for these demanding applications.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for increased efficiency and compactness.
2. Lighting: Suitable for LED lighting and high-intensity discharge lamps.
3. Motor Control: Employed in industrial motor drives and control circuits.
4. Renewable Energy: Utilized in solar inverters and wind turbine systems for efficient energy conversion.
5. Automotive: Applied in electric vehicle powertrains and onboard chargers.
6. Industrial Systems: Integrated into industrial automation and robotics for controlling high-power devices.
Its high voltage and current handling capabilities make it suitable for these demanding applications.
Package
The STH2N120K5-2AG is a N-channel MOSFET with a TO-220 package type.
