STW35N60DM2

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STW35N60DM2

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MOSFET N-CH 600V 28A TO247

  • Nhà sản xuấtSTMicroelectronics

  • Ông. Phần #STW35N60DM2

  • Gói TO-247-3

  • Có sẵn6910

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Thông số kỹ thuật

thuộc tính Giá trị
Package Tube
Series MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 110mOhm @ 14A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 54 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2400 pF @ 100 V
PowerDissipation(Max) 210W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Tổng quan

Description

The STW35N60DM2 is a power MOSFET from STMicroelectronics, part of the MDmesh DM2 series. It is designed for high-efficiency power conversion applications. This N-channel MOSFET offers a breakdown voltage of 600V and a continuous drain current of 32A, making it suitable for high-power applications. The device features a low on-resistance, enhancing its efficiency by reducing conduction losses.
The STW35N60DM2 is known for its fast switching capabilities, which are crucial for minimizing switching losses in high-frequency applications. It also includes a low gate charge, further improving its efficiency and reducing drive requirements. The MOSFET is packaged in a TO-247 package, which provides effective thermal performance and ease of mounting in power systems.
Applications for this MOSFET include switch-mode power supplies, power factor correction circuits, and other high-voltage power conversion systems. The STW35N60DM2 brings the benefits of reduced energy consumption and improved system reliability, making it a preferred choice in demanding power electronics applications.

Equivalent

The STW35N60DM2 is a 600V N-channel MOSFET from STMicroelectronics. Equivalent products might include:
1. Infineon IPW60R041C6 - A 600V, N-channel MOSFET.
2. ON Semiconductor FDPF33N60NZ - A 600V, N-channel MOSFET.
3. Vishay SiHG33N60EF - A similar 600V N-channel MOSFET.
Ensure to verify specifications like current rating, Rds(on), and package type to ensure compatibility.

Features

The STW35N60DM2 is a power MOSFET designed by STMicroelectronics, featuring advanced characteristics suitable for various applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 600V and a continuous drain current (I_d) of 35A, making it suitable for high-voltage applications.
2. RDS(on): The device offers low on-state resistance, enhancing efficiency and reducing power loss during operation.
3. Fast Switching: It is designed for fast switching speeds, which improves performance in switching applications and helps minimize energy loss.
4. MDmesh II technology: This technology contributes to its low on-resistance and high-speed switching capabilities, improving overall device performance.
5. Package: The STW35N60DM2 typically comes in a TO-247 package, which aids in heat dissipation and allows for efficient thermal management.
6. Applications: It's ideal for use in power supplies, motor control, and various industrial applications where high efficiency and reliability are crucial.
These features make the STW35N60DM2 a versatile component in the design of power electronic systems.

Pinout

The STW35N60DM2 is a power MOSFET, part of the MDmesh DM2 series by STMicroelectronics. It is designed for high efficiency and fast switching applications. This MOSFET is typically provided in a TO-247 package, which is a three-pin configuration.
The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the current to flow between the drain and source.
2. Drain (D): This pin is the output for the current that is to be switched. It is connected to the high-voltage side of the circuit when the MOSFET is on.
3. Source (S): This pin is the return path for the current. It is typically connected to the ground or a low-voltage side of the circuit.
These pins enable the STW35N60DM2 to function effectively in various high-voltage applications, offering low on-state resistance and fast switching capabilities.

Manufacturer

The STW35N60DM2 is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer. The company is headquartered in Geneva, Switzerland, and is known for designing, developing, manufacturing, and marketing a wide range of semiconductor products. Their products are used in a variety of applications, including automotive, industrial, personal electronics, and computer hardware. STMicroelectronics is a significant player in the global semiconductor industry, providing both standard and custom solutions for managing power, processing data, and connecting devices.

Application

The STW35N60DM2 is a power MOSFET typically used in applications requiring high efficiency and fast switching. Its primary application areas include:
1. Switch Mode Power Supplies (SMPS): Utilized for its efficiency in converting electrical power.
2. Motor Control: Employed in inverters and motor drives for precise control and energy efficiency.
3. Lighting Applications: Used in electronic ballasts for efficient lighting solutions.
4. Renewable Energy Systems: Integrated into solar inverters and similar renewable technologies.
5. Industrial Automation: Supports automation systems requiring reliable power management.
These applications leverage its low on-state resistance and high-speed switching capabilities.

Package

The STW35N60DM2 is a power MOSFET from STMicroelectronics and is typically available in a TO-247 package.

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