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STW70N60DM2
+BOMMOSFET N-CH 600V 66A TO247
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STW70N60DM2
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Bảng dữ liệu STW70N60DM2 DataSheet
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Gói TO-247
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Có sẵn6889
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Series | MDmesh™ DM2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 66A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 42mOhm @ 33A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 121 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 5508 pF @ 100 V |
| Power Dissipation (Max) | 446W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
Tổng quan
Description
The STW70N60DM2 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured by STMicroelectronics. It is part of the MDmesh™ DM2 series, known for its high efficiency and optimized for high-frequency switching applications. The device features a breakdown voltage of 600V and a continuous drain current of 70A, making it suitable for various high-power applications such as power supplies, motor drives, and converters.
Key features of the STW70N60DM2 include low gate charge and reduced on-resistance, which contribute to minimizing power losses and improving overall system efficiency. The device also benefits from a fast recovery body diode, enhancing performance in hard-switching environments. Additionally, it comes in a TO-247 package, which provides good thermal performance and easy integration into power circuits.
Overall, the STW70N60DM2 is designed to deliver high performance and reliability in demanding power management applications, while also supporting energy-efficient operation.
Key features of the STW70N60DM2 include low gate charge and reduced on-resistance, which contribute to minimizing power losses and improving overall system efficiency. The device also benefits from a fast recovery body diode, enhancing performance in hard-switching environments. Additionally, it comes in a TO-247 package, which provides good thermal performance and easy integration into power circuits.
Overall, the STW70N60DM2 is designed to deliver high performance and reliability in demanding power management applications, while also supporting energy-efficient operation.
Equivalent
The STW70N60DM2 is a power MOSFET from STMicroelectronics. Equivalent products may include:
1. IRFP460 - from Infineon Technologies.
2. FQA70N10 - from ON Semiconductor.
3. APT60M60JLL - from Microsemi (now part of Microchip Technology).
4. IXFH80N075 - from IXYS (part of Littelfuse).
Always verify specifications such as voltage, current, and package compatibility when selecting equivalents.
1. IRFP460 - from Infineon Technologies.
2. FQA70N10 - from ON Semiconductor.
3. APT60M60JLL - from Microsemi (now part of Microchip Technology).
4. IXFH80N075 - from IXYS (part of Littelfuse).
Always verify specifications such as voltage, current, and package compatibility when selecting equivalents.
Features
The STW70N60DM2 is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_ds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_d) is 70A, allowing it to handle significant power loads.
3. Technology: Built on MDmesh DM2 technology, it offers low on-resistance and fast switching speeds, enhancing overall efficiency.
4. R_DS(on): The device features a low on-state resistance, minimizing conduction losses.
5. Switching Performance: Optimized for low switching losses, it supports rapid on/off operations, which is ideal for high-frequency applications.
6. Thermal Performance: Encased in a TO-247 package, it offers efficient heat dissipation, which is crucial for high-power applications.
7. Applications: Commonly used in power supply designs, converters, inverters, and motor control systems.
8. Protection: Incorporates avalanche and dv/dt ruggedness for enhanced reliability.
These features make the STW70N60DM2 a robust choice for demanding electrical and electronic applications.
1. Voltage Rating: It has a drain-source voltage (V_ds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_d) is 70A, allowing it to handle significant power loads.
3. Technology: Built on MDmesh DM2 technology, it offers low on-resistance and fast switching speeds, enhancing overall efficiency.
4. R_DS(on): The device features a low on-state resistance, minimizing conduction losses.
5. Switching Performance: Optimized for low switching losses, it supports rapid on/off operations, which is ideal for high-frequency applications.
6. Thermal Performance: Encased in a TO-247 package, it offers efficient heat dissipation, which is crucial for high-power applications.
7. Applications: Commonly used in power supply designs, converters, inverters, and motor control systems.
8. Protection: Incorporates avalanche and dv/dt ruggedness for enhanced reliability.
These features make the STW70N60DM2 a robust choice for demanding electrical and electronic applications.
Pinout
The STW70N60DM2 is a power MOSFET from STMicroelectronics. It features a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This is the input terminal used to control the MOSFET. A voltage applied to the gate regulates the current flow between the drain and the source.
2. Drain (D): This is the terminal through which the main current flows from the source when the MOSFET is in the 'on' state. It is connected to the load in a circuit.
3. Source (S): This is the terminal through which the current exits the MOSFET. It is typically connected to the ground or negative side of the power supply in a circuit.
The STW70N60DM2 is designed for high-efficiency switching applications and is commonly used in power conversion and amplification circuits. Its specifications typically include high voltage and current ratings, making it suitable for heavy-duty applications.
1. Gate (G): This is the input terminal used to control the MOSFET. A voltage applied to the gate regulates the current flow between the drain and the source.
2. Drain (D): This is the terminal through which the main current flows from the source when the MOSFET is in the 'on' state. It is connected to the load in a circuit.
3. Source (S): This is the terminal through which the current exits the MOSFET. It is typically connected to the ground or negative side of the power supply in a circuit.
The STW70N60DM2 is designed for high-efficiency switching applications and is commonly used in power conversion and amplification circuits. Its specifications typically include high voltage and current ratings, making it suitable for heavy-duty applications.
Manufacturer
The STW70N60DM2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. It serves various sectors, including automotive, industrial, personal electronics, computer, and communication equipment. The company is known for its innovation in creating integrated circuits, discrete devices, and microcontrollers, among other semiconductor components. Based in Geneva, Switzerland, STMicroelectronics operates worldwide and is one of the leading players in the semiconductor industry.
Application
The STW70N60DM2 is a power MOSFET, and its application areas include:
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Applied in motor drivers for industrial and automotive applications.
3. Battery Chargers: Utilized in chargers for high-efficiency charging.
4. Inverters: Suitable for DC-AC conversion in solar inverters and UPS systems.
5. Lighting: Employed in LED and HID lighting for energy efficiency.
6. Telecommunications: Used in telecom power systems for effective power management.
7. Automotive: Implemented in electric and hybrid vehicles for various power control applications.
These applications leverage the MOSFET's ability to handle high voltage and current efficiently.
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Applied in motor drivers for industrial and automotive applications.
3. Battery Chargers: Utilized in chargers for high-efficiency charging.
4. Inverters: Suitable for DC-AC conversion in solar inverters and UPS systems.
5. Lighting: Employed in LED and HID lighting for energy efficiency.
6. Telecommunications: Used in telecom power systems for effective power management.
7. Automotive: Implemented in electric and hybrid vehicles for various power control applications.
These applications leverage the MOSFET's ability to handle high voltage and current efficiently.
Package
The STW70N60DM2 is a power MOSFET and comes in a TO-247 package type. This package is commonly used for high-power semiconductor devices, providing efficient heat dissipation and allowing for higher current handling capabilities.
