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STWA88N65M5
+BOMMOSFET N-CH 650V 84A TO247
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #STWA88N65M5
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Có sẵn2213
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | STMicroelectronics |
| Package / Case | Tube |
| Series | MDmesh™ V |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 84A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 29mOhm @ 42A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 204 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 8825 pF @ 100 V |
| Power Dissipation (Max) | 450W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
Tổng quan
Description
STWA88N65M5 is a high‑voltage N‑channel power MOSFET from STMicroelectronics, used in switching power supplies, motor drives, inverters, solar and automotive electronics.
Key points:
- Vds around 650 V; Id typically in the single‑digit to low tens of amps, depending on package and cooling.
- Rds(on) commonly in the ~0.8–1.5 Ω range at Vgs ≈ 10 V (values vary by device and temperature).
- Gate threshold ~2–4 V; Vgs max ±20 V. A ~10–12 V gate drive is usually recommended for lowest conduction loss.
- Robust switching performance with avalanche ruggedness; available in surface‑mount (e.g., D²PAK/IPAK) and through‑hole (TO‑220) packages.
How to use:
- Drive the gate with appropriate gate resistor and a 10–12 V drive; attach to adequate heatsinking; observe safe operating area.
Note:
- Always refer to the latest ST datasheet for exact, per‑package parameters and recommended operating conditions.
Key points:
- Vds around 650 V; Id typically in the single‑digit to low tens of amps, depending on package and cooling.
- Rds(on) commonly in the ~0.8–1.5 Ω range at Vgs ≈ 10 V (values vary by device and temperature).
- Gate threshold ~2–4 V; Vgs max ±20 V. A ~10–12 V gate drive is usually recommended for lowest conduction loss.
- Robust switching performance with avalanche ruggedness; available in surface‑mount (e.g., D²PAK/IPAK) and through‑hole (TO‑220) packages.
How to use:
- Drive the gate with appropriate gate resistor and a 10–12 V drive; attach to adequate heatsinking; observe safe operating area.
Note:
- Always refer to the latest ST datasheet for exact, per‑package parameters and recommended operating conditions.
Equivalent
I can’t look up live cross‑references. STWA88N65M5 is a 650V N‑channel power MOSFET; equivalents are any MOSFETs matching VDS=650V, similar ID, RDS(on), Qg and same package. Check parts from Infineon, Vishay, ON Semiconductor, Rohm, Toshiba and Nexperia. For an exact drop‑in, compare the ST datasheet pinout and key ratings (VDS, ID, RDS(on), VGS(th), Qg) before substituting.
Features
STWA88N65M5 is a high-voltage N-channel power MOSFET from STMicroelectronics. Key features:
- 650 V N-channel enhancement-mode MOSFET
- Continuous drain current: ~88 A
- Low conduction losses with optimized RDS(on) and low gate charge for efficient switching
- Fast switching performance (dv/dt and di/dt capability)
- Avalanche rugged with robust body diode for inductive loads
- Suitable for high-voltage SMPS, PFCs, DC-DC converters, and motor drives
- Wide operating temperature range (-55°C to 150°C)
- RoHS compliant; available in multiple power packages
Note: For exact electricals (RDS(on), Qg, packaging options), refer to the official datasheet.
- 650 V N-channel enhancement-mode MOSFET
- Continuous drain current: ~88 A
- Low conduction losses with optimized RDS(on) and low gate charge for efficient switching
- Fast switching performance (dv/dt and di/dt capability)
- Avalanche rugged with robust body diode for inductive loads
- Suitable for high-voltage SMPS, PFCs, DC-DC converters, and motor drives
- Wide operating temperature range (-55°C to 150°C)
- RoHS compliant; available in multiple power packages
Note: For exact electricals (RDS(on), Qg, packaging options), refer to the official datasheet.
Pinout
STWA88N65M5 is an N‑channel power MOSFET with three electrical pins: Gate (G), Drain (D) and Source (S). It also includes a metal mounting tab/heatsink that is electrically connected to the Drain. Its function is as an N‑channel enhancement‑mode power switch for high‑power/high‑voltage applications (switching and conduction in SMPS, motor drives, and other power electronics).
Manufacturer
Manufacturer: STMicroelectronics (often abbreviated ST).
What kind of company: STMicroelectronics is a multinational semiconductor manufacturer and supplier. It designs, develops and produces integrated circuits and discrete semiconductor devices (including power MOSFETs like the STW88N65M5) for automotive, industrial, consumer electronics and communications markets. Headquartered in Geneva with major operations in France and Italy, it is a publicly traded company (ticker: STM).
What kind of company: STMicroelectronics is a multinational semiconductor manufacturer and supplier. It designs, develops and produces integrated circuits and discrete semiconductor devices (including power MOSFETs like the STW88N65M5) for automotive, industrial, consumer electronics and communications markets. Headquartered in Geneva with major operations in France and Italy, it is a publicly traded company (ticker: STM).
Application
STWA88N65M5 is a high-voltage N-channel MOSFET (about 650 V) for switching power applications. Typical use areas:
- Offline AC-DC adapters/chargers (PFC and flyback)
- Switching-mode power supplies and DC-DC converters
- Motor-drive inverters and controller circuits
- Solar inverters and battery charging systems
- Uninterruptible power supplies (UPS) and telecom power supplies
- Offline AC-DC adapters/chargers (PFC and flyback)
- Switching-mode power supplies and DC-DC converters
- Motor-drive inverters and controller circuits
- Solar inverters and battery charging systems
- Uninterruptible power supplies (UPS) and telecom power supplies
Package
The STWA88N65M5 is supplied in a TO-247-3L (three-lead, through-hole) package.
