SVD5865NLT4G

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SVD5865NLT4G

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MOSFET N-CH 60V 10A/46A DPAK

  • Nhà sản xuấtonsemi

  • Ông. Phần #SVD5865NLT4G

  • Gói TO-252-3

  • Có sẵn5950

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tape & Reel (TR),Bulk
Series Automotive, AEC-Q101
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 10A (Ta), 46A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 16mOhm @ 19A, 10V
Vgs(th)(Max) @ Id 2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 29 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1400 pF @ 25 V
Power Dissipation (Max) 3.1W (Ta), 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK-3

Tổng quan

Description

The SVD5865NLT4G is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in electronic circuits. It is part of the SVD series of MOSFETs produced by a semiconductor manufacturing company. These devices are typically used for switching and amplifying electronic signals in various applications, including power management, automotive, and industrial systems.
Key features of the SVD5865NLT4G may include low on-resistance, fast switching speeds, and high efficiency, making it suitable for use in high-performance applications where power conservation is crucial. The transistor is likely to be housed in a TO-252 package, which is a common surface-mount package type that provides a good balance between size and heat dissipation.
The "NLT4G" in its name might indicate specific characteristics of the MOSFET, such as its tolerance, packaging, or lead-free composition. For exact specifications and application notes, consulting the manufacturer's datasheet is recommended.

Equivalent

The SVD5865NLT4G is a Schottky barrier diode from ON Semiconductor. Equivalent products or alternatives can include similar Schottky diodes from other manufacturers with comparable specifications, such as:
1. SS16 from Diodes Incorporated
2. MBR160 from Vishay
3. 1N5819 from various manufacturers
Ensure to cross-check the specifications like reverse voltage, forward current, and package type when considering these alternatives.

Features

The SVD5865NLT4G is a surface-mount LED from ON Semiconductor designed for various lighting applications. Key features include:
1. High Brightness: It offers high luminous intensity, making it suitable for applications requiring bright, efficient lighting.
2. Compact Size: The LED comes in a small, 0603 package, ideal for space-constrained designs.
3. Wide Viewing Angle: It provides a wide viewing angle, which enhances visibility and uniformity in lighting applications.
4. Low Power Consumption: This LED is designed for energy efficiency, helping reduce overall power usage in devices.
5. Long Lifespan: It offers durability and reliability with a long operational lifespan, reducing maintenance needs.
6. RoHS Compliance: The SVD5865NLT4G is compliant with RoHS (Restriction of Hazardous Substances), ensuring it meets environmental and safety standards.
7. Available in Different Colors: It is available in various colors, providing flexibility for different design requirements.
These features make the SVD5865NLT4G a versatile choice for designers looking for reliable, efficient, and compact LED solutions.

Pinout

The SVD5865NLT4G is a MOSFET transistor typically used for switching and amplifying electronic signals in various applications. This specific component is produced by ON Semiconductor. It features a small, surface-mount package that is well-suited for compact electronic designs.
As for the pin count, the SVD5865NLT4G comes in a PowerPAK SO-8 package, which typically has a total of 8 pins. However, it's important to note that not all pins may be used for distinct connections; some might be internally connected or used for thermal management.
Regarding its function, the MOSFET is designed to handle high power and voltage levels, making it suitable for applications such as power management, motor drives, and DC-DC converters. It operates efficiently with low ON-resistance, providing effective thermal performance and high-speed switching capabilities. Always refer to the datasheet for precise electrical characteristics and pin configurations to ensure proper application in your design.

Manufacturer

The SVD5865NLT4G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is an American semiconductor supplier company that focuses on energy-efficient electronics. They design, manufacture, and supply a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications.
The company is known for its emphasis on developing solutions that improve energy efficiency, support sustainable energy initiatives, and provide innovations in power management. Onsemi's products are integral to advanced technology systems that require high performance and reliability, catering to the evolving needs of various industries with a strong focus on innovation and sustainable practices.

Application

The SVD5865NLT4G is a MOSFET transistor, and its application areas typically include power management and conversion tasks. It is commonly used in:
1. DC-DC Converters: For regulating power in various electronic devices.
2. Power Supplies: Used in managing and converting power in adapters and chargers.
3. Motor Drives: For controlling motors in industrial and consumer applications.
4. Load Switches: In switching applications to control power distribution.
5. Battery Protection: Managing charging and discharging in battery-powered devices.
6. Telecommunications: For power regulation in communication equipment.
Its features like low on-resistance and fast switching make it suitable for these applications to enhance efficiency and performance.

Package

The SVD5865NLT4G is typically housed in a surface-mount package known as the DPAK (TO-252). This package type is designed for thermal efficiency and is commonly used for power transistors, offering a compact footprint suitable for high-performance applications.

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