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TP0610K-T1-E3
+BOMMOSFET P-CH 60V 185MA SOT23-3
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #TP0610K-T1-E3
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Bảng dữ liệu TP0610K-T1-E3 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Base Product Number | TP0610 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 185mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 15 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 23 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Tổng quan
Description
For instance, if TP0610K-T1-E3 is a technical course, it might begin with an overview of the technical principles or theories underpinning the subject, present the core areas of study, and outline the skills or knowledge students are expected to gain. The course might also provide insights into its relevance to real-world applications or industry practices, and introduce the methodologies or tools that will be used throughout the curriculum.
For a precise understanding, you would need to refer to the specific syllabus or course outline provided by the educational institution or organization offering the module.
Equivalent
Features
1. Low On-Resistance: Offers efficient conduction with minimal power loss, enhancing performance in applications where power efficiency is critical.
2. Low Voltage Operation: Optimized for low-voltage applications, making it suitable for battery-powered devices.
3. Fast Switching Speed: Enables quick transitions between the on and off states, beneficial for high-speed applications.
4. Small Package Size: Typically available in a compact package, aiding in space-constrained designs and promoting efficient use of PCB real estate.
5. Thermal Performance: Designed to manage heat effectively, ensuring reliable operation under various thermal conditions.
6. Protection Features: May include built-in protections like ESD protection, enhancing device longevity and reliability.
7. Wide Application Range: Suitable for applications such as power management, load switching, and signal processing in consumer electronics, automotive, and industrial systems.
These features make the TP0610K-T1-E3 a versatile component in modern electronic circuit design.
Pinout
1. Gate (G): The pin that controls the MOSFET's switching operation by applying a voltage to it.
2. Drain (D): The pin where the main current flow enters the MOSFET when it is in the 'on' state.
3. Source (S): The pin where the current exits the MOSFET.
It is generally used in applications requiring efficient and precise control of low to moderate power levels, such as in signal processing and digital electronics.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage rating for the TP0610K-T1-E3?
A: The TP0610K-T1-E3 is rated for a maximum drain-to-source voltage (Vdss) of 60 V, suitable for low-voltage power management.
Q: Can this P-Channel MOSFET be driven with a 5V logic level?
A: Yes, it supports drive voltages from 4.5V to 10V, making it compatible with 5V logic for switching applications.
Q: What is the typical on-resistance at 500mA load?
A: The maximum Rds(on) is 6 Ohms at Vgs = 10V and Id = 500mA, ensuring efficient low-current switching.
Q: What is the package type and footprint for this device?
A: It comes in a SOT-23-3 (TO-236) surface-mount package, ideal for compact PCB designs.
Q: Is this part suitable for high-temperature environments?
A: Yes, it operates over a junction temperature range of -55°C to +150°C, suitable for harsh conditions.
Q: What is the maximum power dissipation capability?
A: The maximum power dissipation is 350mW (Ta), limiting continuous current at elevated ambient temperatures.
Q: Does it include built-in ESD protection?
A: Specifications do not indicate ESD protection; standard handling precautions for MOSFETs are recommended.