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TPS51225BRUKR
+BOMIC REG QUAD BUCK/LNR SYNC 20WQFN
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Nhà sản xuấtTexas Dụng cụ
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Ông. Phần #TPS51225BRUKR
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Bảng dữ liệu TPS51225BRUKR DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | D-CAP™ |
| Part Status | Active |
| Topology | Step-Down (Buck) Synchronous (2), Linear (LDO) (2) |
| Number of Outputs | 4 |
| Frequency - Switching | 300kHz, 355kHz |
| Voltage / Current - Output 1 | Controller |
| Voltage / Current - Output 2 | Controller |
| Voltage / Current - Output 3 | 3V, 100mA |
| w / LED Driver | No |
| w / Supervisor | No |
| w / Sequencer | No |
| Voltage - Supply | 5.5V ~ 24V |
| Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Surface Mount |
| Package / Case | 20-WFQFN Exposed Pad |
| Supplier Device Package | 20-WQFN (3x3) |
| Base Product Number | TPS51225 |
Tổng quan
Description
Key features include under-voltage and over-voltage protection, thermal shutdown capabilities, and the ability to support up to 4A of load current. The TPS51225BRUKR operates efficiently with low quiescent current, which helps minimize power consumption in low-power applications.
It comes in a compact 16-pin HTQFP package, facilitating easy integration into various designs. This regulator is ideal for use in laptops, desktops, and servers where reliable memory performance is critical. Overall, the TPS51225BRUKR is a robust solution for addressing the power needs of modern DDR memory systems.
Equivalent
Features
1. Input Voltage Range: Operates from 4.5V to 16V, making it suitable for a variety of systems.
2. Output Voltage: Provides adjustable output voltage with a reference of 0.5V for DDR termination.
3. Dual Outputs: Capable of supplying two separate outputs for VTT and VREF, enhancing versatility.
4. High Efficiency: Low quiescent current and high-efficiency operation optimize power consumption.
5. Protection Features: Includes overcurrent protection, thermal shutdown, and undervoltage lockout to ensure reliability.
6. Fast Transient Response: Designed to handle rapid load changes, ensuring stable output in dynamic environments.
7. Compact Package: Offered in a small 10-pin VQFN package, facilitating space-constrained designs.
These features make the TPS51225BRUKR ideal for memory termination in advanced computing applications, including servers and high-performance laptops.
Pinout
The primary functions of the pins include:
- VDD (1): Input power supply.
- GND (2): Ground reference.
- VREF (3): Reference voltage output.
- VCAP (4): Capacitor connection for internal voltage regulation.
- COMP (5): Compensation network connection.
- ILIM (6): Current limit setting.
- SENSE (7, 8): Sense pins for voltage sensing on VTT outputs.
- VTT (9, 10): Regulated termination voltage output.
- PSP (11): Power state pin for low-power mode.
- PGOOD (12): Power good output indicator.
- FB (13, 14): Feedback pins for regulation and monitoring.
This device is designed to provide power for DDR memory systems, ensuring stable voltage levels for memory operations.
Manufacturer
The company serves a wide range of markets, including automotive, industrial, personal electronics, communications, and enterprise systems. TI's product portfolio includes processors, amplifiers, and power management devices, among others, making it a significant player in the global semiconductor industry.
The TPS51225 is a voltage regulator designed for power management applications, particularly in DDR memory systems, highlighting TI's focus on providing high-performance solutions for various electronic applications. Overall, Texas Instruments is recognized for its commitment to quality, reliability, and innovation in the semiconductor sector.
Application
1. DDR Memory Termination: Provides power for DDR, DDR2, DDR3, and DDR4 memory modules.
2. Motherboards: Used in PC and server motherboards for stable memory operation.
3. Graphics Cards: Supplies power to high-performance graphics memory.
4. Networking Equipment: Supports memory in routers and switches.
5. Industrial Applications: Integrates in systems requiring reliable memory performance.
Overall, it enhances voltage regulation and stability for memory components in electronic devices.