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UCC27516DRSR
+BOMIC GATE DRVR LOW-SIDE 6SON
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Nhà sản xuấtTexas Dụng cụ
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Ông. Phần #UCC27516DRSR
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| Base Product Number | UCC27516 |
| Digi Key Programmable | Not Verified |
| Driven Configuration | Low-Side |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT, MOSFET (N-Channel) |
| Voltage - Supply | 4.5V ~ 18V |
| Logic Voltage - VIL, VIH | 1V, 2.4V |
| Current - Peak Output (Source, Sink) | 4A, 4A |
| Input Type | Inverting, Non-Inverting |
| Rise / Fall Time (Typ) | 8ns, 7ns |
| Operating Temperature | -40°C ~ 140°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-SON (3x3) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Tổng quan
Description
UCC27516DRSR is a Texas Instruments MOSFET gate-driver IC. It provides fast, high-current gate-drive capability to switch power MOSFETs in applications such as switching regulators, DC-DC converters, inverters, and motor drives. The device is designed to be driven from a single supply and accepts TTL/CMOS-compatible input signals, delivering a strong, well-controlled gate voltage to minimize switching losses and timing errors.
Typical uses include driving MOSFETs in half-bridge or full-bridge configurations, where fast rise/fall times and adequate peak source/sink current are important. The DR suffix mainly indicates packaging and reel options (D package, RoHS-compliant, tape-and-reel). For exact electrical specs (supply range, propagation delay, built-in protections, and pinout), consult the TI datasheet.
Typical uses include driving MOSFETs in half-bridge or full-bridge configurations, where fast rise/fall times and adequate peak source/sink current are important. The DR suffix mainly indicates packaging and reel options (D package, RoHS-compliant, tape-and-reel). For exact electrical specs (supply range, propagation delay, built-in protections, and pinout), consult the TI datasheet.
Features
UCC27516DRSR is a high-speed MOSFET gate driver from TI. Key features include:
- High peak source/sink current for fast gate charging/discharging
- Gate-drive supply range typically 4.5 V to 18 V
- Logic inputs compatible with 3.3 V and 5 V logic levels
- Undervoltage lockout (UVLO) on the gate-drive supply
- Enable input to disable outputs
- Break-before-make/slash shoot-through protection to reduce cross-conduction
- Fast propagation delay and sharp output transitions
- Good dv/dt immunity and robust ESD protection
- Small 8-pin DRSR package (RoHS-compliant)
Applications: driving N- or P-channel MOSFETs in switching power supplies, motor drives, and other high-speed switching circuits.
- High peak source/sink current for fast gate charging/discharging
- Gate-drive supply range typically 4.5 V to 18 V
- Logic inputs compatible with 3.3 V and 5 V logic levels
- Undervoltage lockout (UVLO) on the gate-drive supply
- Enable input to disable outputs
- Break-before-make/slash shoot-through protection to reduce cross-conduction
- Fast propagation delay and sharp output transitions
- Good dv/dt immunity and robust ESD protection
- Small 8-pin DRSR package (RoHS-compliant)
Applications: driving N- or P-channel MOSFETs in switching power supplies, motor drives, and other high-speed switching circuits.
Pinout
- Pin count: 8 pins
- Function: A single-channel, high-speed MOSFET gate driver that takes a logic input and provides a buffered, high-current output to drive a MOSFET gate (powered from VCC with GND return).
- Function: A single-channel, high-speed MOSFET gate driver that takes a logic input and provides a buffered, high-current output to drive a MOSFET gate (powered from VCC with GND return).
Manufacturer
- Manufacturer: Texas Instruments Incorporated (TI).
- What kind of company: A U.S.-based multinational semiconductor company that designs and manufactures analog and embedded processing integrated circuits and other electronics.
- What kind of company: A U.S.-based multinational semiconductor company that designs and manufactures analog and embedded processing integrated circuits and other electronics.
Application
Common application areas for UCC27516DRSR:
- Gate drive for fast-switching MOSFETs/IGBTs in switch-mode power supplies (buck/boost/flyback/LLC)
- Half-bridge/full-bridge power stages in DC-DC converters, motor drives, and inverters
- Synchronous rectification and PWM control in telecom, data-center, and industrial power systems
- Class-D audio and other high-efficiency switching power stages
- Automotive and industrial power electronics requiring robust, high-speed gate drive performance
- Gate drive for fast-switching MOSFETs/IGBTs in switch-mode power supplies (buck/boost/flyback/LLC)
- Half-bridge/full-bridge power stages in DC-DC converters, motor drives, and inverters
- Synchronous rectification and PWM control in telecom, data-center, and industrial power systems
- Class-D audio and other high-efficiency switching power stages
- Automotive and industrial power electronics requiring robust, high-speed gate drive performance
Package
UCC27516DRSR uses an 8‑pin SOIC package (D‑package); RoHS compliant, Tape‑and‑Reel variant.
