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UCC27712DR
+BOMIC GATE DRVR HALF-BRIDGE 8SOIC
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Nhà sản xuấtTexas Dụng cụ
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Ông. Phần #UCC27712DR
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Gói SOIC (D)-8
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Có sẵn4181
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel, P-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 1.5V, 1.6V |
| Current-PeakOutput(SourceSink) | 1.8A, 2.8A |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 16ns, 10ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Tổng quan
Description
Key features include built-in dead-time control to prevent shoot-through, undervoltage lockout (UVLO) protection, and a high-speed, low-propagation delay of approximately 100 ns. The UCC27712DR is also equipped with a split output configuration to allow independent optimization of turn-on and turn-off times. Its small SOIC-8 package makes it ideal for space-constrained applications.
With its comprehensive protection features and high efficiency, the UCC27712DR is well-suited for power supply systems, motor drives, and renewable energy inverters, providing reliable performance in demanding environments.
Equivalent
1. IR2110 - A high and low-side driver from Infineon Technologies.
2. NCP5181 - A high-speed gate driver from ON Semiconductor.
3. L6386E - A high voltage half-bridge driver from STMicroelectronics.
These alternatives have similar functions but always verify electrical specifications and pin compatibility for your specific application.
Features
1. High Current Capacity: It can source 2.5 A and sink 5 A, making it suitable for driving large MOSFETs and IGBTs.
2. Wide Supply Voltage Range: It operates over a voltage range of 10 V to 20 V, offering flexibility in various applications.
3. Fast Propagation Delay: The device features a fast propagation delay of 100 ns, enhancing the switching performance.
4. High Input Immunity: It provides high common-mode transient immunity of up to 100 V/ns, ensuring reliable operation in noisy environments.
5. UVLO Protection: The device includes under-voltage lockout (UVLO) for both high-side and low-side drivers, protecting against low supply voltages.
6. Thermal Shutdown: Built-in thermal protection prevents damage from overheating.
7. Shoot-through Prevention: It includes mechanisms to prevent simultaneous conduction of high-side and low-side transistors.
These features make the UCC27712DR ideal for applications requiring robust and efficient gate driving capabilities, such as motor drives, power supplies, and inverters.
Pinout
1. VDD (Pin 1): Supply voltage pin for the low-side driver.
2. HB (Pin 2): High-side driver bootstrap supply pin.
3. HO (Pin 3): High-side driver output pin.
4. HS (Pin 4): High-side driver return pin.
5. HI (Pin 5): High-side input pin.
6. LI (Pin 6): Low-side input pin.
7. COM (Pin 7): Ground pin for the low-side driver.
8. LO (Pin 8): Low-side driver output pin.
The UCC27712DR is designed for driving power MOSFETs and IGBTs in high-performance power conversion applications, such as motor drives, industrial power supplies, and solar inverters. It features key capabilities such as high-speed switching, independent control of high and low sides, and robust protection features.
Manufacturer
Application
1. Switch-Mode Power Supplies (SMPS): Used for efficient power conversion and regulation.
2. Motor Drives: Enhances the performance of motor control systems by providing reliable gate driving.
3. Uninterruptible Power Supplies (UPS): Ensures stability and efficiency in power backup systems.
4. Solar Inverters: Facilitates DC to AC conversion in photovoltaic systems.
5. Industrial Power Systems: Provides reliable operation in high-voltage and high-frequency environments.
These applications benefit from the IC’s ability to drive both high-side and low-side MOSFETs and IGBTs efficiently.