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UCC5350MCQDRQ1
+BOMDGTL ISO 3KV 1CH GATE DVR 8SOIC
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Nhà sản xuấtTexas Dụng cụ
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Ông. Phần #UCC5350MCQDRQ1
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Bảng dữ liệu UCC5350MCQDRQ1 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| Technology | Capacitive Coupling |
| Number of Channels | 1 |
| Voltage - Isolation | 3000Vrms |
| Common Mode Transient Immunity (Min) | 100kV/µs |
| Propagation Delay tp LH / tp HL (Max) | 100ns, 100ns |
| Pulse Width Distortion (Max) | 20ns |
| Rise / Fall Time (Typ) | 10ns, 10ns |
| Current - Output High, Low | 5A, 5A |
| Current - Peak Output | 10A |
| Voltage - Output Supply | 13.2V ~ 33V |
| Grade | Automotive |
| Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Approval Agency | CQC, UL, VDE |
| Base Product Number | UCC5350 |
| Qualification | AEC-Q100 |
Tổng quan
Description
Key specifications include a 4 A source and 8 A sink peak current capability, allowing it to effectively drive large power transistors. It also offers Miller clamp functionality to prevent parasitic turn-on, undervoltage lockout (UVLO) protection, and fast propagation delays for improved performance in fast-switching applications. The compact SOIC-16 package aids in reducing board space while maintaining thermal performance.
The UCC5350MCQDRQ1 is particularly suited for use in industrial motor drives, solar inverters, and automotive powertrains, where efficient and reliable isolated gate driving is crucial. Its design optimizes power efficiency and system protection, making it a valuable component in modern power electronic systems.
Equivalent
1. ADuM4135 from Analog Devices
2. Si8271 from Silicon Labs
3. 1EDI60N12AF from Infineon Technologies
4. ACPL-P343 from Broadcom
These alternatives offer similar isolation, voltage ratings, and functionalities, catering to various applications in power electronics. Always verify specifications to ensure suitability for specific requirements.
Features
1. Isolation Voltage: It offers a galvanic isolation rating of up to 3 kVRMS, enhancing safety and signal integrity in high-voltage applications.
2. High Peak Output Current: It supports up to 2.5 A of peak source and 5 A of peak sink current, which helps rapidly charge and discharge the gate capacitance of power transistors.
3. Short Propagation Delay: The driver features a propagation delay of less than 60 ns, which is crucial for high-frequency applications.
4. Operating Temperature: It has a wide operating temperature range from -40°C to 125°C, making it suitable for harsh environments.
5. Supply Voltage Range: The driver operates with a supply voltage range from 5 V to 18 V.
6. Robustness: It includes features like undervoltage lockout (UVLO) to protect against low supply voltage conditions and increase reliability.
This device is ideal for automotive and industrial applications where space, efficiency, and reliability are critical.