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ZXMN10A08DN8TA
+BOMMOSFET 2N-CH 100V 1.6A 8SO
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Nhà sản xuấtDiode Tập hợp
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Ông. Phần #ZXMN10A08DN8TA
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 3.2A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 50V |
| Power - Max | 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | ZXMN10 |
Tổng quan
Description
The ZXMN10A08DN8TA is an N-channel MOSFET designed for various switching applications. It features a low on-resistance, allowing for efficient power management and reduced heat generation. With a maximum continuous drain current of 10 A and a drain-source voltage rating of 80 V, it is suitable for use in power supplies, motor drivers, and other circuits requiring high efficiency. The device is housed in a compact DPAK package, facilitating easy integration into circuit designs while maintaining thermal performance. Its fast switching capabilities make it ideal for high-frequency applications. The ZXMN10A08DN8TA is commonly used in consumer electronics, automotive systems, and industrial applications, providing reliable performance in demanding environments.
Equivalent
The ZXMN10A08DN8TA is a N-channel MOSFET. Equivalent products include:
1. IRLZ44N
2. FQP30N06L
3. STP30NF06L
4. BSS138
5. AO3400
Always verify specifications such as voltage, current ratings, and package types for compatibility.
1. IRLZ44N
2. FQP30N06L
3. STP30NF06L
4. BSS138
5. AO3400
Always verify specifications such as voltage, current ratings, and package types for compatibility.
Features
The ZXMN10A08DN8TA is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for high-voltage applications.
2. Current Handling: It can handle continuous drain current (I_D) up to 10A, allowing it to drive moderate loads effectively.
3. On-Resistance: The device exhibits a low on-resistance (R_DS(on)) of approximately 0.045Ω at V_GS = 10V, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, enabling low-voltage drive compatibility.
5. Package Type: It is available in a compact TO-220 package, which facilitates heat dissipation and easy mounting in circuits.
6. Fast Switching Speed: The MOSFET supports fast switching times, making it ideal for applications in power management and converters.
Overall, the ZXMN10A08DN8TA is a robust choice for various electronic applications requiring reliable switching performance.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for high-voltage applications.
2. Current Handling: It can handle continuous drain current (I_D) up to 10A, allowing it to drive moderate loads effectively.
3. On-Resistance: The device exhibits a low on-resistance (R_DS(on)) of approximately 0.045Ω at V_GS = 10V, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, enabling low-voltage drive compatibility.
5. Package Type: It is available in a compact TO-220 package, which facilitates heat dissipation and easy mounting in circuits.
6. Fast Switching Speed: The MOSFET supports fast switching times, making it ideal for applications in power management and converters.
Overall, the ZXMN10A08DN8TA is a robust choice for various electronic applications requiring reliable switching performance.
Pinout
The ZXMN10A08DN8TA is a N-channel MOSFET from the ZXMN series, featuring a pin count of 8. Its primary functions include switching and amplification applications in power management systems.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or negative supply.
The MOSFET is designed for low on-resistance and high-speed switching, making it suitable for use in DC-DC converters, motor drivers, and other power management applications. Key specifications typically include a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of up to 10A.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or negative supply.
The MOSFET is designed for low on-resistance and high-speed switching, making it suitable for use in DC-DC converters, motor drivers, and other power management applications. Key specifications typically include a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of up to 10A.
Manufacturer
The ZXMN10A08DN8TA is manufactured by Diodes Incorporated, a global manufacturer and supplier of high-performance semiconductor products. Founded in 1959, Diodes Incorporated specializes in a wide range of discrete, analog, and mixed-signal semiconductor devices. The company primarily serves various sectors, including consumer electronics, automotive, industrial, and computing. Their product portfolio includes rectifiers, transistors, diodes, and voltage regulators, among others.
Diodes Incorporated focuses on innovation and quality, offering solutions that enhance performance and energy efficiency in electronic applications. With a commitment to research and development, the company aims to meet the evolving needs of its customers and the semiconductor industry. Its global presence includes manufacturing facilities, design centers, and sales offices, allowing it to effectively serve clients around the world.
Diodes Incorporated focuses on innovation and quality, offering solutions that enhance performance and energy efficiency in electronic applications. With a commitment to research and development, the company aims to meet the evolving needs of its customers and the semiconductor industry. Its global presence includes manufacturing facilities, design centers, and sales offices, allowing it to effectively serve clients around the world.
Application
The ZXMN10A08DN8TA is a N-channel MOSFET commonly used in various applications, including:
1. Power Management: Efficient switching in power supplies and converters.
2. Motor Control: Driving motors in automotive and industrial applications.
3. Load Switching: Controlling loads in consumer electronics and appliances.
4. Lighting Control: Dimming and switching in LED lighting systems.
5. Signal Switching: Used in RF and analog signal applications.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications, enhancing efficiency and performance.
1. Power Management: Efficient switching in power supplies and converters.
2. Motor Control: Driving motors in automotive and industrial applications.
3. Load Switching: Controlling loads in consumer electronics and appliances.
4. Lighting Control: Dimming and switching in LED lighting systems.
5. Signal Switching: Used in RF and analog signal applications.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications, enhancing efficiency and performance.
Package
The ZXMN10A08DN8TA is packaged in a DPAK (also known as TO-252) format. This surface-mount package is designed for power applications, providing efficient thermal performance and compact size.
