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ZXMN2F30FHTA
+BOMMOSFET N-CH 20V 4.1A SOT23-3
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Nhà sản xuấtDiode Tập hợp
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Ông. Phần #ZXMN2F30FHTA
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Bảng dữ liệu ZXMN2F30FHTA DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 4.1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 45mOhm @ 2.5A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.8 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 452 pF @ 10 V |
| Power Dissipation (Max) | 960mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Tổng quan
Description
The ZXMN2F30FHTA is often used in applications such as DC-DC converters, load switches, and power management systems. It comes in a compact SOT-23 package, making it suitable for use in space-constrained circuit boards. The transistor is designed to handle moderate power levels and operates efficiently, often featuring a drain-source voltage (V_DS) of around 30V and a continuous drain current (I_D) of several amps.
This MOSFET is utilized for its efficiency and reliability, which are critical in both consumer electronics and industrial applications. Engineers choose the ZXMN2F30FHTA for its balance of performance and size, making it a versatile component in the design of modern electronic circuits.
Equivalent
1. IRLML2502 - Similar N-channel MOSFET with comparable voltage and current ratings.
2. BSN20BK - Offers similar characteristics suitable for low to medium power applications.
3. NTZD3154C - Dual N-channel with similar specifications.
Always verify electrical characteristics like maximum voltage, current, RDS(on), and package type to ensure compatibility.
Features
1. Type: N-channel MOSFET.
2. Voltage: It typically supports a drain-source voltage (V_DS) of around 30V.
3. Current: It can handle a continuous drain current (I_D) of approximately 4.9A.
4. R_DS(on): The on-resistance is low, usually around 22mΩ, minimizing power loss.
5. Package: Often available in a compact SOT-23 or similar surface-mount package.
6. Applications: Suitable for low voltage, high-speed switching applications, such as in DC-DC converters, battery management systems, and load switches.
7. Thermal Performance: Offers good thermal performance for efficient heat dissipation.
8. Efficiency: Optimized for low gate charge, providing efficient switching with minimal energy loss.
9. Reliability: Built to ensure robustness and reliability in various electronic applications.
These features make it suitable for use in a wide range of electronic projects and devices requiring efficient and reliable power management.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation by applying voltage, which regulates the flow of current between the drain and source.
2. Drain (D): The drain pin is where the current flows out of the transistor. It is connected to the load in the circuit.
3. Source (S): The source pin is where the current enters the transistor. It is often connected to ground or the negative side of a circuit.
This device is commonly used for switching applications and general-purpose amplification due to its low on-resistance and fast switching speed. It is suitable for low- to medium-power applications.