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ZXMP3A17E6TA
+BOMMOSFET P-CH 30V 3.2A SOT-23-6
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Nhà sản xuấtDiode Tập hợp
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Ông. Phần #ZXMP3A17E6TA
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Bảng dữ liệu ZXMP3A17E6TA DataSheet
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Gói SOT-23-6
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 70mOhm @ 3.2A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15.8 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 630 pF @ 15 V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-6 |
Tổng quan
Description
Key specifications include a maximum drain-source voltage (Vds) of typically around -20V and a continuous drain current (Id) of approximately -3.5A, depending on the specific model. The device is encapsulated in a compact SOT-23 package, which is ideal for space-constrained circuit designs. Its low gate threshold voltage allows it to be driven by lower voltage circuits, enhancing its versatility.
The ZXMP3A17E6TA's small form factor, energy efficiency, and robust performance make it a popular choice for engineers seeking to optimize power usage and enhance the functionality of electronic devices.
Equivalent
1. IRF5305 - P-channel MOSFET suitable for similar applications.
2. FQP27P06 - Offers similar voltage and current ratings.
3. SI2333DS - Another P-channel MOSFET with comparable specifications.
4. AO3407 - A P-channel MOSFET with similar characteristics.
Always verify the specific electrical characteristics and package type when selecting an equivalent to ensure full compatibility with your application.
Features
1. P-Channel MOSFET: It is a P-channel enhancement mode MOSFET, suitable for high-side switching applications.
2. Voltage and Current Ratings: Typically offers a drain-source voltage (V_DS) of -30V and a drain current (I_D) of approximately -3.5A.
3. Low On-Resistance: Features low on-resistance (R_DS(on)), which ensures less power loss and improved efficiency.
4. SMD Package: Comes in a compact SOT-23 package, suitable for surface-mount technology, saving space on PCBs.
5. Fast Switching: Designed for fast switching speeds, making it ideal for high-speed and high-efficiency applications.
6. Wide Application Range: It's typically used in power management, load switching, and DC-DC converters.
These features make the ZXMP3A17E6TA a versatile choice for engineers needing efficient power management solutions in compact electronic designs.
Pinout
1. Gate (G): This pin is used to control the conductivity of the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Source (S): This pin is connected to the source of the P-channel MOSFET. For P-channel devices, the source is usually connected to the more positive voltage.
3. Drain (D): This pin is connected to the drain of the MOSFET. Current flows from the source to the drain when the MOSFET is in the 'on' state.
The ZXMP3A17E6TA is used in applications requiring efficient power switching and voltage conversion, thanks to its low on-resistance and fast switching capabilities.