Part A
2N7002A-7
Diode Tập hợp
- Lifecycle
- Active
- Stock
- 1569 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002A-7 is a compatible functional replacement candidate for the 2N7002-7-F, with both N-channel MOSFETs sharing identical package, voltage, and current ratings. Designers should validate gate threshold and RDS(on) tolerances against circuit requirements before substituting.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002-7-F
Diode Tập hợp
- Lifecycle
- Active
- Stock
- 5757 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002-7-F | 2N7002A-7 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vdss) | 60 V | 60 V | Sets the maximum voltage the MOSFET can block; must meet or exceed circuit rail voltage for safe operation. |
| Continuous Drain Current (Id) | 115 mA | 115 mA | Defines the maximum steady-state current the device can carry; must cover the load current with margin. |
| Drain-Source On-Resistance (Rds(on)) | 7.5 Ω @ Vgs=10V, Id=50mA | 7.5 Ω @ Vgs=10V, Id=50mA | Determines conduction losses and voltage drop; lower Rds(on) improves efficiency and reduces heat. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Indicates the gate voltage needed to start conduction; affects compatibility with logic-level drive signals. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can damage the gate oxide and destroy the device. |
| Power Dissipation (Pd) | 200 mW | 200 mW | Limits how much power the package can dissipate; constrains usable current at given Rds(on) and temperature. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; higher capacitance slows transitions and increases drive loss. |
| Package / Mounting | SOT-23, Surface Mount | SOT-23, Surface Mount | Must match the PCB footprint and assembly process for direct drop-in substitution. |
| Channel Type / Configuration | N-Channel, Enhancement Mode | N-Channel, Enhancement Mode | Determines polarity and drive behavior; mismatched type would invert or disable circuit operation. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002A-7 | 2N7002-7-F |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 180mA (Ta) | 115mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 115mA, 5V | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 23 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 370mW (Ta) | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the 2N7002-7-F and the 2N7002A-7?
Both are 60 V, 115 mA N-channel enhancement-mode MOSFETs in SOT-23 packages from Diodes Incorporated. The 2N7002-7-F is the standard 2N7002 variant, while the 2N7002A-7 is a tighter-specification version that guarantees a lower maximum on-resistance (RDS(on)) and a lower maximum gate threshold voltage (VGS(th)) range, making it more suitable for low-voltage logic-level drive applications.
Are the 2N7002-7-F and 2N7002A-7 pin-compatible and package-compatible?
Yes. Both devices are offered in the same SOT-23 (TO-236) surface-mount package with identical pinout: Gate on pin 1, Source on pin 2, and Drain on pin 3. They share the same PCB land pattern and can be placed interchangeably on the same footprint.
What is the maximum drain-source voltage (VDS) rating for both parts?
Both the 2N7002-7-F and 2N7002A-7 have a maximum drain-source voltage rating of 60 V, as specified in the Diodes Incorporated datasheets.
What is the continuous drain current (ID) rating for these MOSFETs?
Both devices are rated for a continuous drain current of 115 mA at TA = 25°C, with a pulsed drain current rating of 800 mA, per the manufacturer datasheets.
How does the on-resistance (RDS(on)) compare between the 2N7002-7-F and 2N7002A-7?
The 2N7002A-7 specifies a lower maximum RDS(on) than the standard 2N7002-7-F. At VGS = 10 V and ID = 500 mA, the 2N7002A-7 guarantees a maximum RDS(on) of 1.2 Ω, while the 2N7002-7-F is typically specified at 1.6 Ω maximum under similar conditions. At VGS = 4.5 V, the 2N7002A-7 also offers a tighter maximum RDS(on) specification, making it preferable for low-voltage gate drive designs.
What is the gate threshold voltage (VGS(th)) range for each device?
The 2N7002-7-F has a VGS(th) range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002A-7 has a tighter VGS(th) range of 0.8 V to 1.5 V at the same test conditions, which ensures more consistent turn-on behavior in low-voltage logic-level applications.
Can the 2N7002A-7 be used as a direct drop-in replacement for the 2N7002-7-F?
In most cases, yes, because both share the same package, pinout, and voltage/current ratings. However, the 2N7002A-7 has a lower maximum RDS(on) and a lower VGS(th) range, which can affect circuit behavior in designs that rely on the specific threshold or on-resistance characteristics of the 2N7002-7-F. The replacement should be validated against the target application requirements and the manufacturer datasheets.
What are the typical applications for these MOSFETs?
Both the 2N7002-7-F and 2N7002A-7 are commonly used for low-power switching, level shifting, small-signal amplification, and interfacing logic circuits with loads such as relays, LEDs, and small motors. The 2N7002A-7 is particularly suited for low-voltage logic-level drive applications due to its tighter VGS(th) and lower RDS(on) specifications.