Part A
2N7002
STMicroelectronics
- Lifecycle
- Active
- Stock
- 1470 PCS
- Package
- SOT-23
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002E-T1-E3 is a functionally compatible replacement candidate for the 2N7002, sharing the same N-channel enhancement-mode MOSFET architecture, SOT-23 package, and 60 V drain-source rating. Designers should validate gate threshold voltage tolerance and on-resistance at the intended operating point before committing to production, as these parameters may shift switching behavior in sensitive circuits.
Drain-Source Voltage Rating
High match
Package Type
High match
On-Resistance
Validation required
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002E-T1-E3
Sản phẩm Vishay Siliconix
- Lifecycle
- Active
- Stock
- 7566 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002 | 2N7002E-T1-E3 |
|---|---|---|
| Part Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Tc) | 240mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 3Ohm @ 250mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 2 nC @ 5 V | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±18V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 43 pF @ 25 V | 21 pF @ 5 V |
| Power Dissipation (Max) | 350mW (Tc) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | STripFET™ | - |