Part A
2N7002DW
onsemi
- Lifecycle
- Active
- Stock
- 6631 PCS
- Series
- Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Replacement verdict
Compatible functional replacement candidate
The 2N7002DW and 2N7002-7-F are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002 electrical core, and SOT-363 footprint, making them strong functional replacement candidates. Designers should confirm channel-to-channel isolation, gate threshold spread, and thermal derating for their specific application before committing to a drop-in substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Channel Configuration
Validation required
Parts at a glance
Part B
2N7002-7-F
Diode Tập hợp
- Lifecycle
- Active
- Stock
- 5757 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002DW | 2N7002-7-F | Why it matters |
|---|---|---|---|
| Package / Mounting Type | 6-TSSOP, SC-88, SOT-363 (Surface Mount, dual) | SOT-23 (Surface Mount, single) | Package and pin count determine PCB footprint and whether one or two MOSFETs are available per device, directly affecting board layout and substitutability. |
| Number of Channels | 2 (Dual) | 1 (Single) | A dual device integrates two MOSFETs in one package, while a single device provides only one; this changes component count and circuit design. |
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the MOSFET can block; must meet or exceed the circuit's voltage stress for reliable operation. |
| Continuous Drain Current (Id) | 115 mA | 115 mA | Defines the maximum continuous current the device can carry, which must cover the load current with margin. |
| Drain-Source On-Resistance (Rds(on)) | 7.5 Ω @ Vgs=10V, Id=50mA | 7.5 Ω @ Vgs=10V, Id=50mA | Lower on-resistance reduces conduction losses and heat; matching values ensures similar efficiency and thermal behavior. |
| Gate Threshold Voltage (Vgs(th)) | 1 V to 2.5 V | 1 V to 2.5 V | Determines the gate voltage needed to turn the device on; compatibility with logic-level drive signals is essential. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can damage the gate oxide and destroy the device. |
| Power Dissipation (Pd) | 200 mW | 200 mW | Limits how much power the device can dissipate; affects thermal design and maximum usable current. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Influences switching speed and gate drive requirements; similar values give comparable dynamic performance. |
| Operating Junction Temperature | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating range; must cover the application's ambient and self-heating conditions. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002DW | 2N7002-7-F |
|---|---|---|
| Part Status | Active | Active |
| FET Type | - | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | - | 115mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | - | 5V, 10V |
| Rds On(Max) @ Id Vgs | - | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | - | 2.5V @ 250µA |
| Vgs(Max) | - | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 50 pF @ 25 V |
| Power Dissipation (Max) | - | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | 2N7002 | - |
| Configuration | 2 N-Channel (Dual) | - |
| FET Feature | Logic Level Gate | - |
| Current - Continuous Drain (Id) @ 25°C | 115mA | - |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | - |
| Power - Max | 200mW | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |
Frequently asked questions
What are the main differences between the 2N7002DW and the 2N7002-7-F?
The 2N7002DW is a dual N-channel enhancement-mode MOSFET offered in a single package containing two independent 2N7002-type devices, while the 2N7002-7-F is a single N-channel enhancement-mode MOSFET in a SOT-23 package. The 2N7002DW is typically supplied in packages such as SOT-363 (SC-70-6) or similar 6-pin outlines, whereas the 2N7002-7-F is supplied in the 3-pin SOT-23 package.
Are the 2N7002DW and 2N7002-7-F electrically identical per transistor?
Both devices are based on the 2N7002 N-channel MOSFET characteristic, with typical ratings of 60 V drain-source voltage, 115 mA continuous drain current at 25°C, and a maximum power dissipation around 200 mW per transistor in small-outline packages. However, exact limits can vary by manufacturer and package thermal conditions, so the specific datasheet for each part number must be consulted for guaranteed parameters.
Can the 2N7002DW and 2N7002-7-F be used interchangeably in a design?
No, they are not directly interchangeable. The 2N7002DW contains two MOSFETs in a 6-pin package, while the 2N7002-7-F contains one MOSFET in a 3-pin SOT-23 package. Pin count, footprint, and circuit topology differ, so substitution requires a redesign of the PCB layout and verification of the target circuit requirements.
What are the typical package options for the 2N7002DW and 2N7002-7-F?
The 2N7002DW is commonly available in a 6-pin SOT-363 (SC-70-6) package, which houses two separate N-channel MOSFETs. The 2N7002-7-F is typically offered in the 3-pin SOT-23 package, a single N-channel MOSFET. Package designations may vary slightly by manufacturer, so the exact package code should be confirmed from the manufacturer datasheet.
What are the typical voltage and current ratings for these devices?
Both the 2N7002DW and 2N7002-7-F are rated for a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of approximately 115 mA at 25°C per transistor. Power dissipation is typically around 200 mW per transistor in SOT-23 or SOT-363 packages, but actual ratings depend on the manufacturer and thermal environment. Always verify with the specific part datasheet.
Which applications are suitable for the 2N7002DW versus the 2N7002-7-F?
The 2N7002DW is suited for applications requiring two matched N-channel MOSFETs in a compact footprint, such as level shifting, small-signal switching, and dual-channel load switching. The 2N7002-7-F is suited for single-channel low-power switching, signal routing, and general-purpose interfacing where only one MOSFET is needed. Both are used in low-voltage, low-current control circuits.
Do the 2N7002DW and 2N7002-7-F have the same pin configuration?
No. The 2N7002-7-F in SOT-23 typically has three pins: gate, source, and drain. The 2N7002DW in SOT-363 has six pins, providing two independent MOSFETs with separate gate, source, and drain connections for each. The pinouts are not compatible, so PCB footprints and connections must be designed accordingly.
What should be considered when replacing a 2N7002-7-F with a 2N7002DW in an existing design?
Replacing a single 2N7002-7-F with a 2N7002DW requires accommodating the larger 6-pin footprint, rewiring the PCB to use only one of the two internal MOSFETs or both if the circuit can benefit, and verifying that the electrical parameters of the selected internal transistor meet the original design requirements. Thermal and parasitic differences between packages should also be evaluated.