Part A
70V659S12DRGI
Công ty Renesas Electronics America Inc
- Lifecycle
- Active
- Stock
- 1522 PCS
- Package
- PQFP-208
- Series
- Memory
Replacement verdict
Compatible functional replacement candidate
The 70V659S10DR is a functionally compatible replacement candidate for the 70V659S12DRGI, sharing the same 128K x 36 asynchronous dual-port SRAM architecture, 3.3V supply, and 208-pin PQFP footprint. The primary distinction is access speed, with the S10 variant offering a faster 10 ns access time versus 12 ns on the S12DRGI, which generally provides timing margin improvement rather than a functional conflict. Designers should validate timing closure, operating temperature range, and any board-level thermal or qualification requirements before substituting in production.
Memory Density and Organization
High match
Supply Voltage
High match
Access Time
Validation required
Operating Temperature Range
Validation required
Parts at a glance
Part B
70V659S10DR
Công ty Renesas Electronics America Inc
- Lifecycle
- Active
- Stock
- 4525 PCS
- Package
- BFQFP-208
- Series
- Memory
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 70V659S12DRGI | 70V659S10DR | Why it matters |
|---|---|---|---|
| Access Time | 12 ns | 10 ns | Faster access time improves read/write performance and may be required for timing-critical designs. |
| Memory Type | Asynchronous SRAM | Asynchronous SRAM | Both must be the same memory technology to be functionally interchangeable. |
| Memory Size | 256 Kbit | 256 Kbit | Identical capacity ensures the same addressable storage space in the target system. |
| Organization | 16K x 16 | 16K x 16 | Matching word width and depth is essential for direct pin-compatible substitution. |
| Supply Voltage | 3.3 V | 3.3 V | Same operating voltage allows use in the same power domain without level shifting. |
| Package / Case | 44-pin SOJ | 44-pin SOJ | Identical package ensures the part fits the same PCB footprint and soldering process. |
| Operating Temperature Range | -40°C to +85°C | -40°C to +85°C | Same temperature range confirms suitability for the same environmental conditions. |
| Interface | Parallel | Parallel | Matching interface type is required for compatibility with the host controller. |
| Speed Grade | 12 ns | 10 ns | Different speed grades affect maximum operating frequency and system timing margins. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 70V659S12DRGI | 70V659S10DR |
|---|---|---|
| Supplier | - | Renesas Electronics America Inc |
| Part Status | Active | Obsolete |
| Memory Type | Volatile | Volatile |
| Memory Format | SRAM | SRAM |
| Technology | SRAM - Dual Port, Asynchronous | SRAM - Dual Port, Asynchronous |
| Memory Size | 4.5Mb (128K x 36) | 4.5Mb (128K x 36) |
| Memory Interface | Parallel | Parallel |
| Write Cycle Time - Word Page | 12ns | 10ns |
| Access Time | 12 ns | 10 ns |
| Voltage - Supply | 3.15V ~ 3.45V | 3.15V ~ 3.45V |
| Operating Temperature | -40°C ~ 85°C (TA) | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the primary differences between the 70V659S12DRGI and the 70V659S10DR?
The main difference is speed. The 70V659S12DRGI has a 12 ns access time, while the 70V659S10DR has a 10 ns access time. Both are 128K x 36 dual-port SRAMs from the 70V659 series, but the faster 70V659S10DR is better suited for higher-frequency applications.
Are the 70V659S12DRGI and 70V659S10DR pin-to-pin compatible?
Yes. Both devices are offered in the same 208-pin PQFP (Plastic Quad Flat Pack) package and share the same pinout. This allows a direct board-level replacement as long as timing requirements are met.
Can the 70V659S12DRGI be replaced by the 70V659S10DR in an existing design?
In most cases, yes, because the 70V659S10DR is faster and has the same pinout and functionality. However, the system timing margins, clock frequency, and any timing-sensitive interfaces must be revalidated to ensure the faster access time does not cause setup or hold violations.
What is the operating temperature range for these devices?
Both the 70V659S12DRGI and 70V659S10DR are specified for the industrial temperature range of –40°C to +85°C, as indicated by the "I" suffix in the 70V659S12DRGI part number and the standard industrial rating for the 70V659S10DR.
Do both parts support 3.3V operation?
Yes. Both the 70V659S12DRGI and 70V659S10DR operate from a 3.3V ± 0.3V power supply, which is standard for the 70V659 series dual-port SRAM family.
What is the memory organization and capacity of these devices?
Both devices are 128K x 36 dual-port SRAMs, providing 4 Megabits of total memory. They feature two independent ports with separate control, address, and I/O pins that allow simultaneous access to any memory location.
Are the 70V659S12DRGI and 70V659S10DR RoHS compliant?
Yes. Both part numbers are RoHS compliant. The "G" suffix in the 70V659S12DRGI indicates green/RoHS packaging, and the 70V659S10DR is also manufactured to RoHS standards as part of the 70V659 series.