Part A
AO3401
Công ty bán dẫn Alpha & Omega
- Lifecycle
- Active
- Stock
- 6918 PCS
- Package
- SOT-23
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The AO3409 and AO3401 are both P-channel enhancement-mode MOSFETs in the SOT-23 package with identical pinout and 30 V drain-source voltage rating, making the AO3409 a viable functional substitute for the AO3401 in many low-voltage switching applications. However, the AO3409 offers lower current handling and higher on-resistance, so the designer must verify that the reduced current capability and increased conduction losses remain acceptable for the target circuit before committing to the replacement.
Channel Polarity
High match
Drain-Source Voltage Rating
High match
Continuous Drain Current
Validation required
On-Resistance
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO3409 | AO3401 | Why it matters |
|---|---|---|---|
| Channel Type | P-Channel | P-Channel | Both are P-channel MOSFETs, so they share the same polarity and basic drive requirements for high-side switching applications. |
| Drain-Source Voltage (Vds) | -30 V | -30 V | Maximum voltage the device can block; identical ratings mean the same voltage margin in the target circuit. |
| Continuous Drain Current (Id) | -2.6 A | -4.0 A | Higher current rating allows the AO3401 to handle larger load currents, which affects suitability for higher-power designs. |
| On-Resistance Rds(on) at Vgs = -10 V | 70 mΩ (max) | 60 mΩ (max) | Lower on-resistance reduces conduction losses and heat; the AO3401 is more efficient at the same gate drive. |
| On-Resistance Rds(on) at Vgs = -4.5 V | 90 mΩ (max) | 85 mΩ (max) | Relevant for low-voltage gate drive (logic-level) operation; lower value improves efficiency when driven at 4.5 V. |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -2.4 V | -1.0 V to -2.4 V | Determines the gate voltage needed to turn the device on; matching ranges ensure similar logic-level compatibility. |
| Total Gate Charge (Qg) | 4.6 nC (typ) | 6.0 nC (typ) | Lower gate charge enables faster switching and lower drive losses; the AO3409 is easier to drive at high frequency. |
| Power Dissipation (Pd) | 1.4 W | 1.4 W | Maximum power the package can dissipate; identical ratings indicate comparable thermal limits in the same footprint. |
| Package | SOT-23 | SOT-23 | Same package means identical PCB footprint and drop-in physical compatibility. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO3401 | AO3409 |
|---|---|---|
| Part Status | Not For New Designs | Not For New Designs |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Ta) | 2.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 50mOhm @ 4A, 10V | 130mOhm @ 2.6A, 10V |
| Vgs(th)(Max) @ Id | 1.3V @ 250µA | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 10 V | 9 nC @ 10 V |
| Vgs(Max) | ±12V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 645 pF @ 15 V | 370 pF @ 15 V |
| Power Dissipation (Max) | 1.4W (Ta) | 1.4W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the key differences between the AO3409 and AO3401 MOSFETs?
The AO3409 is a P-channel MOSFET rated at -30 V VDS and approximately -2.6 A continuous drain current, while the AO3401 is a P-channel MOSFET rated at -30 V VDS and approximately -4.0 A continuous drain current. Both are commonly offered in SOT-23 packages, but the AO3401 generally provides lower on-resistance and higher current capability than the AO3409.
Are the AO3409 and AO3401 both P-channel MOSFETs?
Yes. Both the AO3409 and AO3401 are P-channel enhancement-mode MOSFETs, making them suitable for high-side load switching and similar applications where a P-channel device is required.
Do the AO3409 and AO3401 share the same package and pinout?
Both devices are typically supplied in the SOT-23 surface-mount package with the standard MOSFET pinout (Gate, Source, Drain). Designers should still confirm package and pinout details against the specific manufacturer datasheet before substituting one for the other.
Can the AO3401 directly replace the AO3409 in a circuit?
Direct replacement is not guaranteed without verification. Although both are -30 V P-channel MOSFETs in SOT-23, differences in on-resistance, current rating, gate charge, and threshold voltage can affect circuit behavior. The replacement should be validated against the manufacturer datasheets and the target design requirements.
Which device has the higher continuous drain current rating?
The AO3401 has the higher continuous drain current rating, typically around -4.0 A, compared with approximately -2.6 A for the AO3409, based on manufacturer datasheet values.
Which MOSFET has lower on-resistance, the AO3409 or the AO3401?
The AO3401 typically exhibits lower on-resistance (RDS(on)) than the AO3409 at comparable gate-source voltages. Lower RDS(on) reduces conduction losses, which can be advantageous in higher-current switching applications.
What are typical applications for the AO3409 and AO3401?
Both P-channel MOSFETs are commonly used for load switching, power management, battery protection, and high-side switching in portable and consumer electronics. The AO3401's higher current rating and lower on-resistance make it preferable for applications demanding greater current handling.