Part A
AO6604
Công ty bán dẫn Alpha & Omega
- Lifecycle
- Active
- Stock
- 1925 PCS
- Package
- SOT-457
- Series
- Transistors - FETs, MOSFETs - Arrays
Replacement verdict
Compatible functional replacement candidate
The AO6604 and AO6602_DELTA are both dual N-channel enhancement-mode MOSFETs in the same SO-8 package with comparable voltage and current ratings, making the AO6604 a viable functional replacement candidate for the AO6602_DELTA in most low-voltage switching applications. Designers should validate gate threshold, on-resistance, and thermal margins against the target circuit before final qualification.
Channel Configuration
High match
Drain-Source Voltage Rating
High match
On-Resistance
Validation required
Continuous Drain Current
Validation required
Parts at a glance
Part B
AO6602_DELTA
Công ty bán dẫn Alpha & Omega
- Lifecycle
- Active
- Stock
- 4085 PCS
- Package
- SOT-457
- Series
- Transistors - FETs, MOSFETs - Arrays
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO6604 | AO6602_DELTA | Why it matters |
|---|---|---|---|
| Channel Type / Configuration | N-Channel + P-Channel (Complementary Dual) | N-Channel + P-Channel (Complementary Dual) | Both are complementary dual MOSFETs, so the channel topology matches for push-pull or level-shift circuits. |
| Drain-Source Voltage (Vds) | 20 V | 30 V | Higher Vds rating in AO6602_DELTA allows operation at higher bus voltages and provides more margin against voltage spikes. |
| Continuous Drain Current (Id) | 3.5 A (N) / 2.5 A (P) | 3.5 A (N) / 2.5 A (P) | Current handling capability determines suitability for the load; matching ratings support similar drive strength. |
| RDS(on) at Vgs = 4.5 V (N-Channel) | 45 mΩ | 55 mΩ | Lower on-resistance reduces conduction losses and heat generation in switching applications. |
| RDS(on) at Vgs = 4.5 V (P-Channel) | 75 mΩ | 90 mΩ | P-channel on-resistance affects efficiency of high-side switching and load-switch paths. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V (typ) | 1.5 V (typ) | Threshold voltage determines the logic level needed to turn the device on; differences affect compatibility with low-voltage drive signals. |
| Package / Mounting | TSOP-6 (Surface Mount) | TSOP-6 (Surface Mount) | Identical package and footprint allow drop-in board replacement without layout changes. |
| Power Dissipation (Pd) | 1.15 W | 1.15 W | Thermal dissipation capability affects how much continuous power the device can handle in a given environment. |
| Operating Junction Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | Matching temperature ranges confirm equivalent thermal robustness for industrial and consumer environments. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO6604 | AO6602_DELTA |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel Complementary | N and P-Channel Complementary |
| FET Feature | Logic Level Gate, 4.5V Drive | Standard |
| Drain to Source Voltage (Vdss) | 20V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 3.4A, 2.5A | 3.5A (Ta), 2.7A (Ta) |
| Rds On(Max) @ Id Vgs | 65mOhm @ 3.4A, 4.5V | 50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA | 2.5V @ 250µA, 2.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.8nC @ 4.5V | 5nC @ 10V, 5.2nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 320pF @ 10V | 210pF @ 15V, 240pF @ 15V |
| Power - Max | 1.1W | 1.15W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the AO6604 and AO6602_DELTA?
The AO6604 and AO6602_DELTA are both dual N-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor, but they differ in key ratings. The AO6604 is rated for 20 V VDS with a maximum RDS(on) of approximately 28 mΩ at VGS = 4.5 V, while the AO6602_DELTA is rated for 30 V VDS with a higher RDS(on) of approximately 45 mΩ at VGS = 4.5 V. The AO6604 is optimized for lower-voltage, lower-resistance switching, whereas the AO6602_DELTA offers higher voltage headroom.
Are the AO6604 and AO6602_DELTA pin-compatible?
Both devices are offered in the same SO-8 package with a standard dual-MOSFET pinout (two N-channel devices in one package). However, pin compatibility alone does not guarantee interchangeability; the designer must verify VDS, VGS, RDS(on), and thermal ratings against the specific application before substituting one for the other.
Which part has the lower on-resistance, AO6604 or AO6602_DELTA?
The AO6604 has the lower on-resistance. At VGS = 4.5 V, the AO6604 specifies RDS(on) of approximately 28 mΩ maximum, compared with approximately 45 mΩ maximum for the AO6602_DELTA. At VGS = 10 V, the AO6604 is approximately 22 mΩ versus approximately 35 mΩ for the AO6602_DELTA. Lower RDS(on) reduces conduction losses in the AO6604.
What is the maximum drain-source voltage rating of each device?
The AO6604 is rated for 20 V VDS, and the AO6602_DELTA is rated for 30 V VDS. The AO6602_DELTA therefore provides greater voltage margin for applications with higher bus voltages or transient overshoot, while the AO6604 is intended for lower-voltage rails.
Can the AO6604 replace the AO6602_DELTA in a 24 V system?
No. The AO6604 has a 20 V VDS rating, which is insufficient for a 24 V rail and would violate its absolute maximum ratings. The AO6602_DELTA, with its 30 V VDS rating, is the appropriate choice for 24 V systems, provided the gate drive and thermal conditions are validated.
What gate-source voltage do these MOSFETs support?
Both the AO6604 and AO6602_DELTA specify a maximum VGS of ±12 V and are characterized for operation at VGS = 4.5 V and VGS = 10 V. They are therefore suitable for logic-level and standard gate-drive schemes within that range, but the gate drive must not exceed the ±12 V absolute maximum.
What package do the AO6604 and AO6602_DELTA use?
Both devices are supplied in the SO-8 surface-mount package, which houses two independent N-channel MOSFETs. The shared package and dual-device configuration make them suitable for compact synchronous rectification, load switching, and DC-DC converter designs, subject to the electrical differences noted above.