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AFSC5G35D37T2
+BOMIC AMP 5G LTE 3.4-3.6GHZ 26HLQFN
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Nhà sản xuấtNXP Hoa Kỳ Inc.
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Ông. Phần #AFSC5G35D37T2
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Bảng dữ liệu AFSC5G35D37T2 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Last Time Buy |
| Base Product Number | AFSC5 |
| Frequency | 3.4GHz ~ 3.6GHz |
| Gain | 31dB |
| RF Type | 5G, LTE |
| Voltage - Supply | 0V ~ 32V |
| Mounting Type | Surface Mount |
| Package | 26-LQFN Exposed Pad |
| Supplier Device Package | 26-HLQFN (10x6) |
| Packaging | Tape & Reel (TR) |
Tổng quan
Description
For instance, in military and defense sectors, such codes are often used to classify equipment, projects, or documentation systematically. In technology or engineering, such identifiers might denote a particular product line, component, or technical specification.
To fully understand the significance of AFSC5G35D37T2, one would need more context regarding the industry or field it is associated with, as well as access to the relevant documentation or databases where this code is used. If you have additional information or context about its usage, please provide it for a more detailed explanation.
Equivalent
Features
1. High Frequency Operation: It supports frequencies up to 3.7 GHz, making it suitable for 5G NR infrastructures.
2. Output Power: The transistor delivers high output power, typically around 35 watts, enabling robust performance in demanding RF environments.
3. Efficiency: It offers high efficiency, contributing to energy savings and reduced operating costs.
4. Linearity: The device is designed for excellent linearity, which is crucial for maintaining signal integrity in communication systems.
5. Thermal Management: GaN-on-SiC technology provides superior thermal conductivity, allowing for effective heat dissipation and improved reliability.
6. Ruggedness: It is built to withstand high voltage and temperature conditions, enhancing durability.
7. Compact Package: The transistor comes in a small, rugged package that is suitable for modern compact designs.
These features make the AFSC5G35D37T2 an ideal choice for high-frequency, high-power applications in 5G wireless infrastructure.