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AUIRFR4620TRL
+BOMMOSFET N-CH 200V 24A DPAK
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Nhà sản xuấtMáy chỉnh sửa quốc tế
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Ông. Phần #AUIRFR4620TRL
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Bảng dữ liệu AUIRFR4620TRL DataSheet
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Gói TO-252-3
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Có sẵn5252
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 24A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 78mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1710 pF @ 50 V |
| Power Dissipation (Max) | 144W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-PAK (TO-252AA) |
Tổng quan
Description
Key characteristics:
- Fast switching with low gate charge (Qg: 28nC typical).
- AEC-Q101 qualified, making it suitable for automotive applications.
- Compact D2PAK (TO-263) package for efficient thermal performance.
- Logic-level compatible (4.5V VGS threshold), enabling use with microcontrollers.
Common uses include DC-DC converters, motor drives, and power management in automotive, industrial, and consumer electronics. Its robust design ensures reliability in harsh environments.
For detailed specs, refer to the datasheet.
Equivalent
- IRFR4620PbF (Infineon)
- IRFR4620TRPBF (Infineon)
- STP80NF55-06 (STMicroelectronics)
- FDP8870 (ON Semiconductor)
These alternatives offer similar voltage/current ratings and are drop-in replacements in most applications. Verify datasheets for exact compatibility.
Features
- Voltage Rating: 200V
- Current Rating: 42A (continuous), 168A (pulsed)
- Low On-Resistance (RDS(on)): 19mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Gate Charge (Qg): 60nC (typical)
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-220AB (through-hole, easy mounting)
- Logic-Level Gate Drive: Compatible with 5V/10V drive signals
- Low Thermal Resistance: Efficient heat dissipation
Ideal for motor control, power supplies, and DC-DC converters.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- 200V drain-source voltage (VDS)
- 62A continuous drain current (ID)
- Low on-resistance (RDS(on) = 12mΩ max)
- Optimized for high-efficiency switching in power applications.
Used in motor drives, DC-DC converters, and power management circuits.
Application
1. Automotive Systems – Engine control, lighting, and power distribution.
2. Power Supplies – DC-DC converters and SMPS.
3. Motor Control – Drives for brushed/brushless motors.
4. Industrial Applications – Relays, solenoids, and inverters.
5. Renewable Energy – Solar inverters and battery management.
Its low on-resistance (RDS(on)) and high current handling (62A) make it ideal for high-efficiency switching applications.
