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BSS131H6327XTSA1
+BOMMOSFET N-CH 240V 110MA SOT23-3
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #BSS131H6327XTSA1
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Bảng dữ liệu BSS131H6327XTSA1 DataSheet
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Gói SOT-23-3
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Có sẵn6216
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 240 V |
| Current - Continuous Drain(Id) @ 25°C | 110mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 14Ohm @ 100mA, 10V |
| Vgs(th)(Max) @ Id | 1.8V @ 56µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.1 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 77 pF @ 25 V |
| Power Dissipation (Max) | 360mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 |
Tổng quan
Description
- Low threshold voltage (VGS(th) ~1V), ideal for battery-powered devices.
- Low on-resistance (RDS(on) ~0.28Ω at VGS=4.5V), minimizing power loss.
- Compact SOT-23 package, suitable for space-constrained designs.
- Fast switching speeds, enhancing performance in DC-DC converters, load switches, and power management circuits.
Typical applications include portable electronics, IoT devices, and power distribution systems. Its 20V drain-source voltage (VDS) and 1.7A continuous drain current make it versatile for low-power designs.
For detailed specs, refer to the Infineon datasheet.
Equivalent
- DMN1019USN-7 (Diodes Inc)
- 2N7002DW (On Semi, dual MOSFET)
- BS138 (Fairchild, higher current)
- NDS351AN (On Semi, similar specs)
Check datasheets for exact compatibility in your circuit.
Features
- Low Threshold Voltage (VGS(th)): Typically 1.3V, suitable for low-voltage applications.
- Low On-Resistance (RDS(on)): 0.6Ω max at VGS = 4.5V, ensuring efficient power handling.
- Small Package (SOT-23): Compact and ideal for space-constrained designs.
- Fast Switching: Optimized for high-speed applications.
- Low Gate Charge (Qg): Enhances switching efficiency.
- Voltage Rating: 20V drain-source (VDS), 12V gate-source (VGS).
- Low Power Loss: Improves energy efficiency in portable and battery-powered devices.
Commonly used in load switching, power management, and DC-DC converters.
Pinout
Key Functions:
- Gate (Pin 1): Controls the switching.
- Drain (Pin 2): Connects to the load.
- Source (Pin 3): Ground/reference.
Features:
- Low threshold voltage (suitable for small-signal applications).
- Low on-resistance (RDS(on)) for efficient switching.
- 60V drain-source voltage (VDS) rating.
Commonly used in load switching, power management, and signal amplification.
Manufacturer
Infineon Technologies specializes in power semiconductors, microcontrollers, and security solutions for automotive, industrial, and IoT applications. Known for high-quality components, Infineon is a key player in energy efficiency and connectivity technologies.
The BSS131H6327XTSA1 is part of their OptiMOS™ family, designed for low-voltage, high-efficiency applications.
Application
- Portable Electronics: Power management in smartphones, tablets, and wearables.
- Signal Switching: Low-voltage switching in audio and RF circuits.
- Load Control: Driving small relays, LEDs, and sensors.
- Battery-Powered Devices: Efficient power distribution in IoT and wireless devices.
- Automotive Electronics: Secondary control circuits in infotainment and lighting systems.
Its compact SOT-23 package and low threshold voltage make it ideal for space-constrained, energy-efficient designs.
