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BSS138NH6327XTSA2
+BOMMOSFET N-CH 60V 230MA SOT23-3
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #BSS138NH6327XTSA2
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Bảng dữ liệu BSS138NH6327XTSA2 DataSheet
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Gói PG-SOT23-3
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Có sẵn4345
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 230mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.5Ohm @ 230mA, 10V |
| Vgs(th)(Max) @ Id | 1.4V @ 26µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.4 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 41 pF @ 25 V |
| Power Dissipation (Max) | 360mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 |
Tổng quan
Description
The BSS138NH6327XTSA2 is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. This component is designed for switching applications and is particularly suited for use in low-power electronic devices due to its compact size and efficient performance. Key features of the BSS138NH6327XTSA2 include a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of around 220mA when properly cooled. Its low threshold voltage makes it suitable for interfacing with low-voltage microcontrollers and logic circuits, enabling efficient switching and amplification in small-signal applications. The MOSFET typically comes in a SOT-23 package, which is small and surface-mountable, facilitating its use in compact circuit designs. Its low on-resistance ensures minimal power loss during operation, making it ideal for battery-powered devices and other applications where energy efficiency is critical. This component is often found in consumer electronics, automotive systems, and various other industrial applications.
Equivalent
The BSS138NH6327XTSA2 is a N-channel MOSFET commonly used for low-voltage switching applications. Equivalent products include:
1. 2N7002 - A widely used N-channel MOSFET with similar specifications.
2. BSH103 - Another MOSFET with comparable characteristics.
3. BS170 - Offers similar voltage and current ratings.
4. MMBT170 - SMD version of BS170 suitable for similar applications.
Always verify specific electrical characteristics and packaging requirements to ensure compatibility.
1. 2N7002 - A widely used N-channel MOSFET with similar specifications.
2. BSH103 - Another MOSFET with comparable characteristics.
3. BS170 - Offers similar voltage and current ratings.
4. MMBT170 - SMD version of BS170 suitable for similar applications.
Always verify specific electrical characteristics and packaging requirements to ensure compatibility.
Features
The BSS138NH6327XTSA2 is a N-channel MOSFET designed for various electronic applications. Here are its key features:
1. Type: N-channel enhancement mode MOSFET.
2. Package: Comes in a small SOT-23 surface-mount package.
3. Voltage Rating: Maximum drain-source voltage (V_DS) of 50V.
4. Current Rating: Continuous drain current (I_D) of approximately 0.22A (220mA) at 25°C.
5. R_DS(on): Low on-resistance, typically around 3.5 ohms at a V_GS of 10V.
6. Gate Threshold Voltage: Typically around 1-2V for switching on/off.
7. Applications: Suitable for low-power switching applications, signal processing, and level shifting.
8. Temperature Range: Operates within a wide temperature range, generally from -55°C to +150°C.
9. Efficiency: Low gate charge and capacitance enhance its efficiency in switching applications.
10. RoHS Compliant: Environmentally friendly and compliant with Restriction of Hazardous Substances standards.
These features make the BSS138NH6327XTSA2 a versatile choice for designers in compact and efficient circuit designs.
1. Type: N-channel enhancement mode MOSFET.
2. Package: Comes in a small SOT-23 surface-mount package.
3. Voltage Rating: Maximum drain-source voltage (V_DS) of 50V.
4. Current Rating: Continuous drain current (I_D) of approximately 0.22A (220mA) at 25°C.
5. R_DS(on): Low on-resistance, typically around 3.5 ohms at a V_GS of 10V.
6. Gate Threshold Voltage: Typically around 1-2V for switching on/off.
7. Applications: Suitable for low-power switching applications, signal processing, and level shifting.
8. Temperature Range: Operates within a wide temperature range, generally from -55°C to +150°C.
9. Efficiency: Low gate charge and capacitance enhance its efficiency in switching applications.
10. RoHS Compliant: Environmentally friendly and compliant with Restriction of Hazardous Substances standards.
These features make the BSS138NH6327XTSA2 a versatile choice for designers in compact and efficient circuit designs.
Pinout
The BSS138NH6327XTSA2 is a type of N-channel MOSFET. It typically comes in a SOT-23 package, which has a 3-pin configuration. The pin functions are as follows:
1. Gate (G) - This pin controls the MOSFET's conductivity. Applying a positive voltage to the gate relative to the source allows current to flow between the drain and source.
2. Drain (D) - This is the terminal where the current flows out of the MOSFET. It's connected to the higher voltage side in the circuit when the MOSFET is on.
3. Source (S) - This is the terminal where current enters the MOSFET. It's connected to the lower voltage side in the circuit.
The BSS138N is often used in low-power switching applications due to its low on-resistance and ability to handle small currents efficiently.
1. Gate (G) - This pin controls the MOSFET's conductivity. Applying a positive voltage to the gate relative to the source allows current to flow between the drain and source.
2. Drain (D) - This is the terminal where the current flows out of the MOSFET. It's connected to the higher voltage side in the circuit when the MOSFET is on.
3. Source (S) - This is the terminal where current enters the MOSFET. It's connected to the lower voltage side in the circuit.
The BSS138N is often used in low-power switching applications due to its low on-resistance and ability to handle small currents efficiently.
Manufacturer
The BSS138NH6327XTSA2 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that develops a wide range of semiconductor solutions for various industries. The company is known for producing components for automotive, industrial, and consumer electronics applications, including power semiconductors, sensors, microcontrollers, and security devices. Infineon is recognized for its innovation in energy efficiency, mobility, and security technologies.
Application
The BSS138NH6327XTSA2 is a small-signal MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Switching Circuits: Used for turning on and off electronic loads.
2. Level Shifting: Facilitates interfacing between components with different voltage levels.
3. Signal Amplification: Suitable for amplifying small analog signals in RF and audio circuits.
4. Load Drivers: Drives small loads such as LEDs and low-power motors.
5. Battery-Powered Devices: Due to its low power consumption, it is ideal for portable electronics.
6. Voltage Regulation: Utilized in power management circuits to regulate voltage.
These applications leverage its low on-resistance, fast switching speed, and compact package.
1. Switching Circuits: Used for turning on and off electronic loads.
2. Level Shifting: Facilitates interfacing between components with different voltage levels.
3. Signal Amplification: Suitable for amplifying small analog signals in RF and audio circuits.
4. Load Drivers: Drives small loads such as LEDs and low-power motors.
5. Battery-Powered Devices: Due to its low power consumption, it is ideal for portable electronics.
6. Voltage Regulation: Utilized in power management circuits to regulate voltage.
These applications leverage its low on-resistance, fast switching speed, and compact package.
Package
The BSS138NH6327XTSA2 is a MOSFET transistor housed in a SOT-23 package. This package type is a small, surface-mounted device suitable for applications requiring a compact form factor.
