Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 2.5A |
| RdsOn(Max)@IdVgs | 95mOhm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.2nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 220pF @ 15V |
| Power-Max | 700mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-23-6 Thin, TSOT-23-6 |
Tổng quan
Description
The FDC6561AN is a dual N-Channel MOSFET designed for low-voltage applications. It is commonly used in power management systems due to its efficiency in switching and low on-resistance. The chip integrates two N-channel MOSFETs in a single package, optimizing space and simplifying circuit design. This makes it suitable for use in portable electronic devices such as laptops, smartphones, and other battery-operated gadgets.
Key features of the FDC6561AN include fast switching speeds and low gate charge, which help in minimizing power loss and improving overall device efficiency. Its on-resistance is notably low, typically around a few milliohms, which enables it to handle significant current with minimal heat generation. Additionally, the FDC6561AN is available in a compact surface-mount package, facilitating ease of use in densely packed PCBs.
Overall, the FDC6561AN is a reliable choice for designers seeking efficient power management solutions in compact electronic devices, balancing performance with space-saving requirements.
Key features of the FDC6561AN include fast switching speeds and low gate charge, which help in minimizing power loss and improving overall device efficiency. Its on-resistance is notably low, typically around a few milliohms, which enables it to handle significant current with minimal heat generation. Additionally, the FDC6561AN is available in a compact surface-mount package, facilitating ease of use in densely packed PCBs.
Overall, the FDC6561AN is a reliable choice for designers seeking efficient power management solutions in compact electronic devices, balancing performance with space-saving requirements.
Equivalent
The FDC6561AN is a dual N-channel MOSFET. Equivalent products with similar specifications include:
1. NXP 2N7002K
2. Fairchild (now ON Semiconductor) 74VHC1GT66
3. Vishay Si2302DS
4. Infineon BSS138
5. Diodes Incorporated DMN2010UCB4
Ensure to check the datasheets for exact matching parameters, such as voltage, current ratings, and package type, when selecting an equivalent part.
1. NXP 2N7002K
2. Fairchild (now ON Semiconductor) 74VHC1GT66
3. Vishay Si2302DS
4. Infineon BSS138
5. Diodes Incorporated DMN2010UCB4
Ensure to check the datasheets for exact matching parameters, such as voltage, current ratings, and package type, when selecting an equivalent part.
Features
The FDC6561AN is a dual N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for low voltage, low current switching applications. Key features of the FDC6561AN include:
1. Dual N-Channel Configuration: It comprises two N-channel MOSFETs in a single package, optimizing space in circuit designs.
2. Low On-Resistance: The device offers low on-resistance, which enhances power efficiency by reducing energy losses during switching.
3. Compact Package: The FDC6561AN is typically available in a small surface-mounted package, facilitating high-density PCB layouts.
4. Fast Switching Speed: It allows for rapid switching, which is beneficial in applications requiring quick response times.
5. Low Gate Charge: This feature contributes to lower power consumption and efficient driving of the MOSFET.
6. RoHS Compliant: The device adheres to the Restriction of Hazardous Substances directive, making it environmentally friendly.
These features make the FDC6561AN suitable for applications in power management, load switching, and DC-DC converters, among others.
1. Dual N-Channel Configuration: It comprises two N-channel MOSFETs in a single package, optimizing space in circuit designs.
2. Low On-Resistance: The device offers low on-resistance, which enhances power efficiency by reducing energy losses during switching.
3. Compact Package: The FDC6561AN is typically available in a small surface-mounted package, facilitating high-density PCB layouts.
4. Fast Switching Speed: It allows for rapid switching, which is beneficial in applications requiring quick response times.
5. Low Gate Charge: This feature contributes to lower power consumption and efficient driving of the MOSFET.
6. RoHS Compliant: The device adheres to the Restriction of Hazardous Substances directive, making it environmentally friendly.
These features make the FDC6561AN suitable for applications in power management, load switching, and DC-DC converters, among others.
Pinout
The FDC6561AN is an N-Channel MOSFET, which typically comes in a small-outline SOT-23 package. This package generally has three pins. Here is the concise breakdown of the pin functions:
1. Pin 1 (Gate): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing current to flow from the drain to the source or blocking it.
2. Pin 2 (Source): This pin is usually connected to ground or the lower potential in the circuit. It serves as the source of the carriers (electrons for N-channel) that flow through the channel when the MOSFET is on.
3. Pin 3 (Drain): This pin is where the load is connected. When the MOSFET is turned on, current flows from the drain to the source, provided there is a suitable voltage between these two pins and the gate.
These pin functions allow the FDC6561AN to be used for switching applications in electronic circuits.
1. Pin 1 (Gate): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing current to flow from the drain to the source or blocking it.
2. Pin 2 (Source): This pin is usually connected to ground or the lower potential in the circuit. It serves as the source of the carriers (electrons for N-channel) that flow through the channel when the MOSFET is on.
3. Pin 3 (Drain): This pin is where the load is connected. When the MOSFET is turned on, current flows from the drain to the source, provided there is a suitable voltage between these two pins and the gate.
These pin functions allow the FDC6561AN to be used for switching applications in electronic circuits.
Manufacturer
The FDC6561AN is manufactured by Fairchild Semiconductor. Fairchild Semiconductor was an American company known for its role in the development of the semiconductor industry. Founded in 1957, it was one of the pioneering companies in the production of transistors and integrated circuits. Fairchild played a significant role in shaping the electronics industry and contributed to the Silicon Valley technology boom.
In 2016, Fairchild Semiconductor was acquired by ON Semiconductor (now known as onsemi), another leading player in the semiconductor sector. Onsemi focuses on energy-efficient electronics, supplying a wide range of products including power and signal management, logic, discrete, and custom devices for various industries, including automotive, industrial, and communications.
The FDC6561AN itself is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is used for switching and amplifying electronic signals in various applications. It is part of the semiconductor components that Fairchild, and subsequently onsemi, produced to support electronic circuit design and functionality.
In 2016, Fairchild Semiconductor was acquired by ON Semiconductor (now known as onsemi), another leading player in the semiconductor sector. Onsemi focuses on energy-efficient electronics, supplying a wide range of products including power and signal management, logic, discrete, and custom devices for various industries, including automotive, industrial, and communications.
The FDC6561AN itself is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is used for switching and amplifying electronic signals in various applications. It is part of the semiconductor components that Fairchild, and subsequently onsemi, produced to support electronic circuit design and functionality.
Application
The FDC6561AN is a dual N-channel MOSFET used in various applications due to its compact design and efficient performance. Common application areas include:
1. DC-DC Converters: Utilized in power management circuits for efficient power conversion.
2. Load Switches: Acts as an electronic switch for controlling power to subsystems.
3. Battery Management: Used in battery protection circuits for over-current and short-circuit protection.
4. LED Drivers: Assists in regulating current flow through LED circuits.
5. Consumer Electronics: Integrated into devices such as laptops and mobile phones for power regulation.
6. Motor Control: Employed in driving small motors with PWM (Pulse Width Modulation) for speed control.
Its low on-resistance and fast switching capabilities make it suitable for these applications.
1. DC-DC Converters: Utilized in power management circuits for efficient power conversion.
2. Load Switches: Acts as an electronic switch for controlling power to subsystems.
3. Battery Management: Used in battery protection circuits for over-current and short-circuit protection.
4. LED Drivers: Assists in regulating current flow through LED circuits.
5. Consumer Electronics: Integrated into devices such as laptops and mobile phones for power regulation.
6. Motor Control: Employed in driving small motors with PWM (Pulse Width Modulation) for speed control.
Its low on-resistance and fast switching capabilities make it suitable for these applications.
Package
The FDC6561AN is a dual N-channel MOSFET, and it typically comes in an SO-8 package, which is a small-outline package with eight pins designed for surface-mount applications.
