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FDS89161LZ
+BOMMOSFET 2N-CH 100V 2.7A 8SOIC
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Nhà sản xuấtonsemi
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Ông. Phần #FDS89161LZ
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Bảng dữ liệu FDS89161LZ DataSheet
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Gói SOIC-8
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Có sẵn5815
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 100V |
| Current-ContinuousDrain(Id)@25°C | 2.7A |
| RdsOn(Max)@IdVgs | 105mOhm @ 2.7A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5.3nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 302pF @ 50V |
| Power-Max | 1.6W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Tổng quan
Description
Equivalent
1. NXP BUK9Y8R2-40E: Matches similar specifications.
2. ON Semiconductor NTMFS5C604NL: Another comparable MOSFET.
3. Vishay SiR424DP: Offers similar performance.
4. Infineon BSC042N03SG: Close in electrical characteristics.
Ensure to verify datasheets for compatibility in your specific application.
Features
1. Dual N-Channel Configuration: The device includes two N-channel MOSFETs in a single package, which is efficient for compact circuit designs.
2. Low On-Resistance: It offers low on-state resistance, which can help reduce power loss and improve efficiency in switching applications.
3. SO-8 Package: The device is housed in an SO-8 package, which is standard in many applications and offers a balance between size and thermal performance.
4. Fast Switching Speed: It is designed for fast switching applications, improving performance in high-frequency circuits.
5. Thermal Efficiency: The design helps in dissipating heat effectively, which is crucial for maintaining safe operating temperatures.
6. Wide Range of Applications: Suitable for use in power management, DC/DC converters, load switching, and other electronic applications.
These features make the FDS89161LZ versatile for various circuit designs, focusing on efficiency and compactness.
Pinout
1. Pins 1 and 8: Source (S1) of MOSFET 1.
2. Pin 2: Gate (G1) of MOSFET 1.
3. Pin 3: Drain (D1) of MOSFET 1.
4. Pin 4 and 5: Drain (D2) of MOSFET 2.
5. Pin 6: Gate (G2) of MOSFET 2.
6. Pins 7: Source (S2) of MOSFET 2.
Each MOSFET in the FDS89161LZ is used for switching and amplification in electronic circuits. The device is designed for high efficiency and low on-state resistance, making it suitable for applications such as power management in portable and battery-powered devices.
Manufacturer
Application
1. DC-DC converters: Used in voltage regulation and conversion for efficient power supply.
2. Load switching: Provides efficient on/off control for various electronic devices.
3. Synchronous rectification: Enhances efficiency in power supplies by minimizing power loss.
4. Battery management: Used in battery protection and power distribution systems.
5. Motor control: Supports applications requiring precise motor operation and control.
Its low ON-resistance and compact packaging make it suitable for compact and efficient circuit designs.