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IPW60R070P6
+BOM600V, 0.07OHM, N-CHANNEL MOSFET
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPW60R070P6
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Bảng dữ liệu IPW60R070P6 DataSheet
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Gói PG-TO-247
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Có sẵn7275
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | 1 |
| Series | Bulk |
| Part Status | CoolMOS™ |
| FET Type | Active |
| Technology | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Current - Continuous Drain(Id) @ 25°C | 600 V |
| Drive Voltage(Max Rds On Min Rds On) | 53.5A (Tc) |
| Rds On(Max) @ Id Vgs | 10V |
| Vgs(th)(Max) @ Id | 70mOhm @ 20.6A, 10V |
| Gate Charge(Qg)(Max) @ Vgs | 4.5V @ 1.72mA |
| Vgs(Max) | 100 nC @ 10 V |
| Input Capacitance(Ciss)(Max) @ Vds | ±20V |
| FET Feature | 4750 pF @ 100 V |
| Operating Temperature | 391W (Tc) |
| Mounting Type | -55°C ~ 150°C (TJ) |
| Supplier Device Package | Through Hole |
Tổng quan
Description
- Ultra-low RDS(on) (70mΩ): Reduces conduction losses.
- Fast switching: Optimized for high-frequency operation (e.g., SMPS, motor drives).
- Robust design: Avalanche-rated and improved thermal performance.
- Eco-friendly: Lead-free and RoHS-compliant.
Ideal for power supplies, industrial drives, and renewable energy systems, it balances performance with reliability. The P6 series emphasizes efficiency in hard- and soft-switching topologies.
Equivalent
- IPP60R070P6 (Infineon)
- STP60R070M6 (STMicroelectronics)
- FDPF60R070Z (ON Semiconductor)
- AUIRFP60R070P6 (Infineon)
These are 600V, 70mΩ, N-channel MOSFETs with similar TO-247 packages and performance characteristics. Always verify datasheets for exact compatibility.
Application
1. Switched-Mode Power Supplies (SMPS) – Used in AC/DC and DC/DC converters for servers, telecom, and industrial power systems.
2. Motor Drives – Efficient switching in industrial and automotive motor control applications.
3. Solar Inverters – Enhances performance in photovoltaic energy conversion.
4. UPS Systems – Provides reliable power switching in uninterruptible power supplies.
5. Induction Heating – Supports high-frequency resonant converters.
Its low on-resistance (70mΩ) and fast switching make it ideal for high-power, high-frequency applications.