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IRF1010EPBF
+BOMMOSFET N-CH 60V 84A TO220AB
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF1010EPBF
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Bảng dữ liệu IRF1010EPBF DataSheet
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Gói TO-220AB
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Có sẵn5606
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 84A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 12mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 130 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3210 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Tổng quan
Description
- Voltage Rating: 55V
- Current Rating: 81A (continuous)
- Low On-Resistance (RDS(on)): 12mΩ (max) at 10V
- Fast Switching Speed: Optimized for minimal switching losses
- Package: TO-220AB (through-hole), lead-free and RoHS-compliant
It is commonly used in DC-DC converters, motor control, and power management circuits due to its high current handling, low conduction losses, and robustness. The EPBF suffix indicates enhanced performance and lead-free packaging.
For detailed specs, refer to the datasheet.
Equivalent
- IRF1010E (same specs, different packaging)
- IRF1405 (55V, 169A, lower Rds(on))
- IRF3205 (55V, 110A, common alternative)
- STP80NF55-06 (55V, 80A, STMicro alternative)
- FQP85N06 (60V, 85A, Fairchild alternative)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 55V
- Current Rating: 85A (continuous)
- Low On-Resistance (RDS(on)): 12mΩ (max at VGS=10V)
- Fast Switching Speed: Optimized for high-efficiency applications
- Avalanche Energy Rated: Robust against inductive spikes
- TO-220AB Package: Easy mounting and heat dissipation
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced at 4V)
- Low Gate Charge (Qg): 63nC (typ), reducing switching losses
Ideal for power supplies, motor control, and DC-DC converters.
Pinout
- Pin Count: 3 pins (TO-220AB package)
- Gate (G): Controls switching.
- Drain (D): High-voltage/current terminal.
- Source (S): Ground/reference terminal.
- Key Functions:
- N-Channel MOSFET (Logic-Level)
- Voltage Rating: 55V
- Current Rating: 84A (continuous)
- Low On-Resistance (RDS(on)): ~12mΩ
- Fast Switching Speed
Commonly used in power switching, motor control, and DC-DC converters.
Manufacturer
The IRF1010EPBF is a N-channel power MOSFET designed for high-efficiency switching applications, commonly used in power supplies, motor control, and industrial systems.
Infineon, headquartered in Germany, is a key player in the semiconductor industry, serving automotive, industrial, and consumer markets with innovative and reliable solutions.
Application
1. Switching Power Supplies – Efficient voltage conversion in DC-DC and AC-DC circuits.
2. Motor Control – Drives motors in industrial, automotive, and robotics applications.
3. LED Lighting – Powers high-brightness LED drivers.
4. Audio Amplifiers – Enhances performance in Class-D audio systems.
5. Battery Management – Used in charge/discharge control circuits.
Its low on-resistance (RDS(on)) and high current handling (81A) make it ideal for high-efficiency, high-power applications.
