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IRF3315PBF
+BOMMOSFET N-CH 150V 23A TO220AB
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF3315PBF
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Bảng dữ liệu IRF3315PBF DataSheet
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Gói TO-220-3
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Có sẵn5154
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 23A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 70mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 95 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1300 pF @ 25 V |
| Power Dissipation (Max) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Tổng quan
Description
- Voltage Rating: 150V
- Current Rating: 42A (continuous)
- Low On-Resistance: 36mΩ (max at 10V VGS)
- Fast Switching: Optimized for speed with low gate charge (110nC typical).
It operates with a gate threshold voltage of 2–4V and is housed in a TO-220AB package for easy mounting. Common uses include power supplies, motor control, and DC-DC converters.
Advantages:
- High current handling
- Low conduction losses
- Robust thermal performance
Ensure proper heat sinking for high-power applications. Check datasheet for detailed specs.
Equivalent
- IRF3205PBF (55V, 110A)
- IRF1405PBF (55V, 169A)
- IRL3715PBF (150V, 42A, logic-level)
- STP80NF55-06 (55V, 80A)
- FDP8878 (30V, 118A)
Check voltage/current ratings and pin compatibility before substitution. For exact equivalents, consider IRF3315PbF alternatives from Vishay or Infineon.
Features
- Voltage Rating: 150V
- Current Rating: 42A (continuous)
- Low On-Resistance (RDS(on)): 0.045Ω (max at VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- Avalanche Rated: Robust against inductive load spikes
- Package: TO-220AB (through-hole, easy mounting)
- Gate Charge (Qg): 78nC (typical) for efficient drive
- Low Gate Threshold (VGS(th)): 2-4V
Ideal for power supplies, motor control, and DC-DC converters.
Pinout
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal (low-voltage side).
Key Features:
- N-channel MOSFET
- VDS: 150V
- ID: 42A (continuous)
- RDS(on): 0.045Ω (max at VGS=10V)
Commonly used in power switching, motor control, and DC-DC converters.
Manufacturer
The IRF3315PBF is a power MOSFET designed for efficient switching applications, commonly used in industrial, automotive, and consumer electronics. Infineon's products are widely trusted for reliability and innovation in power management.
Application
1. Switching Power Supplies – Efficient voltage conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives motors in industrial, automotive, and robotics systems.
3. LED Lighting – Powers and controls LED drivers for high-efficiency lighting.
4. DC-DC Converters – Steps up or down voltage in battery-operated devices.
5. Solar Inverters – Converts DC to AC in renewable energy systems.
Its low on-resistance (RDS(on)) and high current handling (up to 42A) make it ideal for high-power, high-efficiency applications.
