IRF3415PBF

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IRF3415PBF

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MOSFET N-CH 150V 43A TO220AB

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain(Id) @ 25°C 43A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 42mOhm @ 22A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 200 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2400 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Tổng quan

Description

The IRF3415PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is utilized in electronic circuits for efficient switching and amplification. Key features include a high continuous drain current of approximately 43A and a low on-resistance of about 10 milliohms, making it suitable for high-efficiency power management applications.
This MOSFET is housed in a TO-220 package, which allows for effective heat dissipation, crucial for maintaining performance under high-load conditions. Its voltage rating typically stands at 150V, ensuring it can handle moderate to high voltage applications without breakdown.
The IRF3415PBF is commonly used in applications such as power supplies, motor drives, and other systems requiring fast switching and high efficiency. Its construction allows for reliable performance in both linear and switching modes, making it versatile for various electronic designs. Additionally, the "PBF" suffix signifies that the device is lead-free and RoHS compliant, adhering to environmental standards for hazardous substances.

Equivalent

The IRF3415PBF is a N-channel MOSFET. Equivalent products include:
1. STP55NF06 from STMicroelectronics
2. FQP30N06L from ON Semiconductor
3. FDP3651U from ON Semiconductor
4. NTD3055-150T4G from ON Semiconductor
5. IPP50N06S3-06 from Infineon Technologies
These equivalents should be checked for compatibility in terms of voltage, current, and package to ensure they meet your application requirements.

Features

The IRF3415PBF is a power MOSFET designed for high-efficiency switching applications. Key features include:
1. Low On-Resistance: It has a low R_DS(on) value, which reduces power loss and improves efficiency.
2. High Current Capacity: The IRF3415PBF can handle high currents, making it suitable for demanding applications.
3. Fast Switching Speed: The MOSFET supports rapid switching, enhancing performance in high-frequency circuits.
4. Avalanche Ruggedness: The device is robust against voltage spikes, providing reliability in harsh conditions.
5. Thermal Performance: It features excellent thermal characteristics, which help in better heat management and enhance the device’s longevity.
6. Lead-Free and RoHS Compliant: The component is environmentally friendly, meeting current industry standards for hazardous substances.
These features make the IRF3415PBF suitable for applications such as power supplies, motor drives, and other high-efficiency power management systems.

Pinout

The IRF3415PBF is a power MOSFET, specifically an N-channel MOSFET designed for high-speed switching applications. It typically comes in a TO-220 package and features three pins. Here’s a concise description of the pin configuration and functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device can be turned on or off. The gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the output through which the main current flows when the MOSFET is in the 'on' state. It is connected to the load in a circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the drain current.
The IRF3415PBF is popular for its low on-resistance and high-speed switching capabilities, making it suitable for applications like power management, motor drives, and other high-power electronic applications.

Manufacturer

The IRF3415PBF is manufactured by Infineon Technologies, which acquired International Rectifier, the original producer of the IRF3415PBF. Infineon Technologies is a German semiconductor company that develops and manufactures a wide range of semiconductor solutions, including microcontrollers, sensors, and power semiconductors. The company operates in various segments such as automotive, industrial power control, power management & multimarket, and digital security solutions. Infineon is known for its innovation and expertise in energy efficiency, mobility, and security applications.

Application

The IRF3415PBF is a power MOSFET commonly used in various applications due to its efficiency and reliability. Its application areas include:
1. Power Supply Units: Utilized in switch-mode power supplies and DC-DC converters for efficient power conversion.
2. Motor Control: Employed in motor drivers for industrial and automotive applications.
3. Battery Management: Used in battery charging and discharging circuits.
4. Audio Amplifiers: Acts as a switching element in high-power audio systems.
5. Inverters: Suitable for use in power inverters for renewable energy systems.
6. Load Switches: Used in load switching applications for high current loads.
These applications leverage its low on-resistance and high current handling capabilities.

Package

The IRF3415PBF is available in a TO-220 package, which is a common through-hole package type used for power semiconductors.

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