IRF520NPBF

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IRF520NPBF

+BOM

MOSFET N-CH 100V 9.7A TO220AB

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 9.7A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 200mOhm @ 5.7A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 25 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 330 pF @ 25 V
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Tổng quan

Description

The IRF520NPBF is an N-channel power MOSFET from Infineon, designed for high-efficiency switching applications. Key features:
- Voltage & Current Ratings: 100V drain-source voltage (VDS) and 9.7A continuous drain current (ID).
- Low On-Resistance: 0.27Ω (max) at 10V gate drive (VGS), reducing conduction losses.
- Fast Switching: Suitable for PWM, motor control, and DC-DC converters.
- Robust Design: Avalanche-rated and lead-free (Pb-free) packaging (TO-220AB).
Common uses include power supplies, LED drivers, and relay replacements. Requires adequate gate drive (≥4.5V) for full performance.

Equivalent

Equivalent products to the IRF520NPBF MOSFET include:
- IRF520N (same specs, different packaging)
- IRF530NPBF (higher voltage, similar characteristics)
- STP55NF06L (similar specs, lower RDS(on))
- FQP30N06L (comparable N-channel MOSFET)
- IRLZ44N (logic-level gate drive alternative)
Always verify datasheets for exact compatibility in your circuit.

Features

The IRF520NPBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V drain-to-source (VDSS)
- Current Rating: 9.7A continuous (ID)
- Low On-Resistance: 0.27Ω (RDS(on)) at 10V gate drive
- Fast Switching: Suitable for high-speed applications
- Gate Threshold (VGS(th)): 2-4V (enhancement mode)
- Power Dissipation: 40W (TC = 25°C)
- Package: TO-220AB (through-hole, easy mounting)
- Avalanche Rated: Robust against inductive loads
Commonly used in power switching, motor control, and DC-DC converters. Requires proper heat sinking for high-current applications.

Pinout

The IRF520NPBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation (threshold voltage ~2-4V).
2. Drain (D) – Connects to the load (max 100V, 9.7A continuous current).
3. Source (S) – Ground/reference terminal.
Key features:
- Low on-resistance (RDS(on)): ~0.27Ω (at 10V VGS).
- Fast switching for power applications (e.g., motor drivers, amplifiers).
- Avalanche-rated for robustness.
Concise and functional for quick reference.

Application

The IRF520NPBF, an N-channel MOSFET, is commonly used in:
1. Switching Circuits – Power supplies, DC-DC converters, and motor drivers.
2. Amplifiers – Audio and RF amplification.
3. LED Drivers – Efficient current control for lighting systems.
4. Relay Replacements – Solid-state switching for automation.
5. H-Bridge Circuits – Motor control in robotics and EVs.
Its high current (9.7A) and voltage (100V) handling make it suitable for medium-power applications.

Package

The IRF520NPBF is a MOSFET transistor packaged in a TO-220AB type. This through-hole package is widely used for power applications, offering good thermal performance and ease of mounting on heat sinks. It has three leads (Gate, Drain, Source) and is suitable for switching and amplification in circuits requiring up to 100V and 9.7A.

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