IRF530PBF

Hình ảnh chỉ để tham khảo

IRF530PBF

+BOM

MOSFET N-CH 100V 14A TO220AB

365 Đảm bảo chất lượng ngày

7*24 giờ dịch vụ quarantee

90-Bảo hành sau bán hàng ngày

Bảo hành sản phẩm chính xác

Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 14A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 160mOhm @ 8.4A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 26 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 670 pF @ 25 V
Power Dissipation (Max) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Tổng quan

Description

The IRF530PBF is an N-channel power MOSFET designed for high-speed switching and amplification applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 17A (continuous)
- Low On-Resistance (RDS(on)): 0.11Ω (max)
- Fast Switching Speed: Suitable for PWM and motor control
- Package: TO-220AB (through-hole, easy to mount)
Common uses include power supplies, DC-DC converters, motor drivers, and audio amplifiers. It requires proper gate drive voltage (typically 10V for full enhancement) and heat sinking for high-current applications.
Advantages: Robust performance, cost-effective, and widely available.
Limitations: Not ideal for ultra-high-frequency applications due to moderate gate charge.
Always refer to the datasheet for detailed specifications and thermal considerations.

Equivalent

Equivalent products to the IRF530PBF (N-channel MOSFET, 100V, 17A, 0.16Ω) include:
- IRF530 (same specs, non-Pb-free)
- IRF540 (higher current: 28A, 0.077Ω)
- IRFZ44N (55V, 49A, 0.0225Ω)
- STP55NF06 (60V, 55A, 0.02Ω)
- FQP30N06L (60V, 32A, 0.035Ω)
Check datasheets for exact compatibility in your circuit.

Features

The IRF530PBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V drain-to-source (VDSS)
- Current Rating: 17A continuous (ID) at 25°C
- On-Resistance: 0.16Ω (RDS(on)) at VGS = 10V
- Gate Threshold Voltage: 2-4V (VGS(th))
- Power Dissipation: 88W (TC = 25°C)
- Fast Switching: Low gate charge (28nC typical)
- Package: TO-220AB (through-hole, easy to mount)
- Applications: Power switching, motor control, amplifiers
Robust and efficient, it’s suitable for medium-power DC/DC converters and other high-voltage circuits.

Pinout

The IRF530PBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal.
Key Features:
- 100V drain-source voltage (VDS)
- 17A continuous drain current (ID)
- 0.16Ω on-resistance (RDS(on))
- Logic-level gate drive (VGS = 10V)
Commonly used in power switching, motor control, and amplifiers.

Manufacturer

The IRF530PBF is manufactured by Infineon Technologies, a leading German semiconductor company. Infineon specializes in power electronics, microcontrollers, and security solutions, serving industries like automotive, industrial, and consumer electronics. Known for high-quality MOSFETs, Infineon acquired International Rectifier (IR) in 2015, inheriting the IRF series, including the IRF530PBF—a robust N-channel power MOSFET. The company is recognized for innovation and reliability in semiconductor technology.

Application

The IRF530PBF, an N-channel MOSFET, is commonly used in:
1. Power Switching – DC-DC converters, motor drivers, and relay replacements.
2. Amplification – Audio and RF amplifiers due to its fast switching.
3. Automotive Systems – Ignition circuits and electronic control units (ECUs).
4. Industrial Applications – Power supplies, inverters, and load switches.
5. Consumer Electronics – SMPS (Switched-Mode Power Supplies) and LED drivers.
With a 100V drain-source voltage and 17A current rating, it suits medium-power applications requiring efficient switching.

Package

The IRF530PBF is packaged in a TO-220AB through-hole package. This package type is widely used for power transistors, offering good thermal performance and ease of mounting on heat sinks. The "PBF" suffix indicates it is lead-free, complying with RoHS standards. The TO-220AB package has three leads and a metal tab for heat dissipation.

Sản phẩm liên quan đến IRF530PBF