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TP0610K-T1-GE3
+BOMMOSFET P-CH 60V 185MA SOT23-3
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #TP0610K-T1-GE3
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Bảng dữ liệu TP0610K-T1-GE3 DataSheet
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Gói SOT-23-3
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Có sẵn5627
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 185mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.7 nC @ 15 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 23 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Tổng quan
Description
Key characteristics include:
- Type: N-channel enhancement mode MOSFET.
- Voltage Rating: It usually handles low to medium voltage levels, often around 60V.
- Current Rating: Typically supports continuous current ratings of a few amperes, suitable for small to medium power applications.
- Package: Often comes in a compact SOT-23 package, ideal for space-constrained designs.
Applications of the TP0610K-T1-GE3 include power management, load switching, and signal modulation in consumer electronics, automotive systems, and industrial equipment. Its efficiency and small size make it a popular choice for designers needing a reliable switch in compact circuits.
Equivalent
1. BS250P - by Infineon
2. 2N7002P - by NXP
3. IRF9520N - by Infineon Technologies (Note: different package)
4. FQP27P06 - by ON Semiconductor (Note: different package)
5. Si2319DS - by Vishay
Ensure compatibility by verifying specifications like voltage, current, and package type.
Features
1. Type: N-channel MOSFET
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) up to 60V.
3. Current Rating: Can handle a continuous drain current (I_D) of up to 200mA.
4. Package: Available in a compact SOT-23 package, suitable for space-constrained designs.
5. Low On-Resistance: Features low R_DS(on), improving efficiency by reducing power loss during operation.
6. Gate Threshold Voltage: Has a gate threshold voltage (V_GS(th)) typically between 1V-2.5V, allowing it to be driven by low-voltage signals.
7. Applications: Ideal for switching applications, load switching, and as a discrete component in various circuits.
These characteristics make the TP0610K-T1-GE3 suitable for use in small electronic devices where efficient power management and compact size are crucial.
Pinout
The TP0610K-T1-GE3 comes in a SOT-23 package, which generally has three pins. The pin configuration is as follows:
1. Gate (G): This pin is responsible for turning the MOSFET on and off by applying the appropriate voltage.
2. Source (S): This pin is the source terminal of the MOSFET where the carriers (usually electrons for N-channel MOSFETs) enter the device.
3. Drain (D): This pin is the drain terminal through which the carriers exit, allowing current to flow when the MOSFET is switched on.
The device is used in applications such as load switching, analog switches, and signal processing circuits. Its small form factor makes it suitable for compact circuit designs.
Manufacturer
Vishay's product portfolio includes a broad array of components such as diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors. The company is known for its innovative approach to component design and its commitment to quality, reliability, and sustainability. Vishay operates globally, with manufacturing facilities and sales offices around the world, enabling it to effectively serve a diverse and international customer base.
