IRF640NPBF

Hình ảnh chỉ để tham khảo

IRF640NPBF

+BOM

MOSFET N-CH 200V 18A TO220AB

365 Đảm bảo chất lượng ngày

7*24 giờ dịch vụ quarantee

90-Bảo hành sau bán hàng ngày

Bảo hành sản phẩm chính xác

Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 18A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 150mOhm @ 11A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 67 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1160 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Tổng quan

Equivalent

Equivalent products to the IRF640NPBF (N-channel MOSFET, 200V, 18A, 0.18Ω) include:
- IRF640 (original non-lead-free version)
- IRF640N (similar specs, different packaging)
- STP16NF06 (60V, 16A, lower voltage)
- IRF740 (400V, 10A, higher voltage)
- FQP18N20 (200V, 18A, TO-220 package)
Check datasheets for exact compatibility in your application.

Features

The IRF640NPBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 200V drain-to-source (VDSS)
- Current Rating: 18A continuous (ID)
- Low On-Resistance: 0.15Ω (RDS(on)) at VGS = 10V
- Fast Switching: Suitable for high-speed applications
- Power Handling: Up to 125W (TC = 25°C)
- Gate Threshold Voltage (VGS(th)): 2-4V
- Avalanche Rated: Robust against inductive spikes
- Package: TO-220AB (through-hole, easy mounting)
Commonly used in power supplies, motor control, and switching circuits.

Pinout

The IRF640NPBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Functions:
- Voltage Rating: 200V
- Current Rating: 18A (continuous)
- Low On-Resistance (RDS(on)): 0.15Ω (typical)
- Fast Switching – Suitable for power applications like motor drives, inverters, and DC-DC converters.
The TO-220AB package allows easy mounting on heatsinks for thermal management.

Manufacturer

The IRF640NPBF is manufactured by Infineon Technologies, a leading German semiconductor company. Infineon specializes in power electronics, automotive systems, and IoT solutions, known for high-quality MOSFETs, microcontrollers, and other semiconductor components. The company serves industries like automotive, industrial, and consumer electronics, emphasizing innovation and energy efficiency. The IRF640NPBF is a popular N-channel power MOSFET used in various switching applications.

Package

The IRF640NPBF is a power MOSFET available in a TO-220AB package. This through-hole package is widely used for its robustness, ease of mounting, and efficient heat dissipation. It features three leads (gate, drain, source) and is suitable for high-power applications. The TO-220AB package is compatible with standard PCB mounting and heat sinks.

Sản phẩm liên quan đến IRF640NPBF

  • Trích dẫn nhanh chóng

  • Gửi yêu cầu báo giá của bạn cho IRF640NPBF sử dụng biểu mẫu này.chúng tôi sẽ trả lời trong vòng 12 giờ.