Hình ảnh chỉ để tham khảo
IRF7465TRPBF
+BOMMOSFET N-CH 150V 1.9A 8SO
-
Nhà sản xuấtCông nghệ Infineon
-
Ông. Phần #IRF7465TRPBF
-
Bảng dữ liệu IRF7465TRPBF DataSheet
-
Có sẵn16049
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 1.9A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 280mOhm @ 1.14A, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 330 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Tổng quan
Description
The IRF7465TRPBF is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) specifically designed for high-efficiency power management applications. It features N-channel enhancement mode technology, which is commonly used in power supply and motor control circuits. Key characteristics of the IRF7465TRPBF include its low on-resistance and fast switching capabilities, contributing to reduced energy losses and improved performance in electronic circuits.
This MOSFET can handle a drain-source voltage (V_ds) of up to 30V and a continuous drain current (I_d) of approximately 92A, making it suitable for medium to high power applications. Additionally, its package, typically the TO-252 (DPAK), provides a compact form factor ideal for surface-mount applications, facilitating efficient thermal management and solderability.
The IRF7465TRPBF is part of the IRF74xx series, offering high reliability and robustness. It is used in applications like DC-DC converters, power management in battery-powered devices, and other demanding electronic systems that require efficient power handling.
This MOSFET can handle a drain-source voltage (V_ds) of up to 30V and a continuous drain current (I_d) of approximately 92A, making it suitable for medium to high power applications. Additionally, its package, typically the TO-252 (DPAK), provides a compact form factor ideal for surface-mount applications, facilitating efficient thermal management and solderability.
The IRF7465TRPBF is part of the IRF74xx series, offering high reliability and robustness. It is used in applications like DC-DC converters, power management in battery-powered devices, and other demanding electronic systems that require efficient power handling.
Equivalent
The IRF7465TRPBF is a P-channel MOSFET. Equivalent products include:
1. FDS6679 from ON Semiconductor
2. SI4925DY from Vishay
3. APM9435 from Anpec
4. AO3407 from Alpha & Omega Semiconductor
5. BSS84 from Nexperia
These equivalents have similar voltage and current ratings, but always double-check datasheets to ensure compatibility for your specific application.
1. FDS6679 from ON Semiconductor
2. SI4925DY from Vishay
3. APM9435 from Anpec
4. AO3407 from Alpha & Omega Semiconductor
5. BSS84 from Nexperia
These equivalents have similar voltage and current ratings, but always double-check datasheets to ensure compatibility for your specific application.
Features
The IRF7465TRPBF is a power MOSFET featuring the following key characteristics:
1. N-Channel MOSFET: It is designed to control high power loads with a robust N-channel design.
2. Voltage and Current Ratings: Capable of handling a maximum drain-source voltage (V_ds) of 55V and continuous drain current (I_d) up to 88A.
3. Low On-Resistance: Exhibits a low R_ds(on) of 8.5 mΩ, minimizing power losses and improving efficiency.
4. Package Type: Available in a TO-252 (DPAK) surface-mount package, suitable for compact PCB designs.
5. Temperature Performance: Operates effectively over a wide temperature range, with a maximum junction temperature of 175°C.
6. Fast Switching: Offers rapid switching characteristics due to low gate charge, enhancing performance in high-frequency applications.
7. Applications: Suitable for various applications including DC-DC converters, motor control, and other high-speed switching applications.
Overall, the IRF7465TRPBF is designed for high-efficiency and performance in power management and control applications.
1. N-Channel MOSFET: It is designed to control high power loads with a robust N-channel design.
2. Voltage and Current Ratings: Capable of handling a maximum drain-source voltage (V_ds) of 55V and continuous drain current (I_d) up to 88A.
3. Low On-Resistance: Exhibits a low R_ds(on) of 8.5 mΩ, minimizing power losses and improving efficiency.
4. Package Type: Available in a TO-252 (DPAK) surface-mount package, suitable for compact PCB designs.
5. Temperature Performance: Operates effectively over a wide temperature range, with a maximum junction temperature of 175°C.
6. Fast Switching: Offers rapid switching characteristics due to low gate charge, enhancing performance in high-frequency applications.
7. Applications: Suitable for various applications including DC-DC converters, motor control, and other high-speed switching applications.
Overall, the IRF7465TRPBF is designed for high-efficiency and performance in power management and control applications.
Pinout
The IRF7465TRPBF is a P-channel MOSFET with a pin count of 3, which are typically configured as:
1. Gate (G): This pin is used to control the MOSFET. Applying a negative voltage relative to the source will turn the MOSFET on.
2. Drain (D): This is the pin where the load is connected. Current flows from drain to source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the power supply for P-channel MOSFETs.
The IRF7465TRPBF is used in various applications such as power management, switching regulators, and other electronic circuits requiring efficient switching. Its compact design and efficient performance make it suitable for battery-powered devices and other applications where low power consumption is critical.
1. Gate (G): This pin is used to control the MOSFET. Applying a negative voltage relative to the source will turn the MOSFET on.
2. Drain (D): This is the pin where the load is connected. Current flows from drain to source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the power supply for P-channel MOSFETs.
The IRF7465TRPBF is used in various applications such as power management, switching regulators, and other electronic circuits requiring efficient switching. Its compact design and efficient performance make it suitable for battery-powered devices and other applications where low power consumption is critical.
Manufacturer
The IRF7465TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in a variety of electronic components, including power semiconductors, microcontrollers, sensors, and security solutions. The company serves a wide range of industries, including automotive, industrial, consumer electronics, and communications. Infineon is known for its focus on energy efficiency, mobility, and security solutions, and it provides products and systems that help enhance performance, safety, and sustainability in electronic applications.
Application
The IRF7465TRPBF is a MOSFET commonly used in various electronic applications. Key application areas include power management systems, DC-DC converters, motor drives, and battery management systems. Its low on-resistance and high current handling capabilities make it suitable for power switching applications. Additionally, it's used in uninterruptible power supplies (UPS), automotive power systems, and industrial automation equipment for efficient power delivery and control. Its robust thermal performance also allows it to be used in high-reliability applications, such as telecommunications and networking equipment.
Package
The IRF7465TRPBF is typically supplied in a D-Pak (TO-252) package. This SMD (Surface Mount Device) package is designed for efficient heat dissipation and compact board placement, suitable for power MOSFET applications.
