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IRF7815TRPBF
+BOMMOSFET N-CH 150V 5.1A 8SO
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF7815TRPBF
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Bảng dữ liệu IRF7815TRPBF DataSheet
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Gói SOIC-8
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 5.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 43mOhm @ 3.1A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1647 pF @ 75 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Tổng quan
Description
Key specifications include its voltage and current ratings, with a typical drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) capability of around 39A, depending on the application conditions. It is constructed using advanced technology that enhances performance in terms of low on-resistance and minimized energy loss, making it suitable for high-frequency applications.
The IRF7815TRPBF is often utilized in power supply systems, motor controls, and other high-power applications due to its robust characteristics. Its package type, usually TO-220 or similar, allows for efficient heat dissipation, critical in high-power operations, ensuring reliability and longevity of the device.
Equivalent
Features
1. Voltage Rating: It operates with a maximum drain-source voltage (V_DS) of 150V.
2. Current Capacity: It supports a continuous drain current (I_D) of up to 14A.
3. R_DS(on): The on-state resistance is low, typically around 85mΩ at 10V gate-source voltage, enhancing efficiency.
4. Package: It is available in a TO-252 (D-PAK) surface-mount package, ideal for compact designs.
5. Temperature Range: The device can operate in a wide temperature range, generally -55°C to +175°C, allowing for use in various environments.
6. Technology: Utilizes advanced planar technology for better switching performance.
7. Application: Suitable for use in DC-DC converters, motor control, and other power management applications.
These features make the IRF7815TRPBF a reliable choice for high-efficiency and compact power electronic solutions.
Pinout
1. Gate (G): This pin is used to control the operation of the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the "on" state. It is connected to the load.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, completing the circuit path when the MOSFET is turned on.
The IRF7815TRPBF is designed for efficient high-speed switching and is typically used in power management, motor control, and various other high-power applications. It features low on-state resistance and high current carrying capability.
Manufacturer
Application
1. Power Management Circuits: Efficient voltage regulation and power supply designs.
2. DC-DC Converters: Used in step-up and step-down converters for voltage regulation.
3. Motor Drives: For driving motors in industrial and consumer applications.
4. Inverters: Utilized in inverter circuits for renewable energy systems like solar inverters.
5. Switching Regulators: Effective in applications requiring high-speed switching.
6. Load Switches: Suitable for controlling power to different loads in electronic devices.
These areas benefit from the MOSFET's low on-resistance and high current handling capabilities.