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IRF9393TRPBF
+BOMMOSFET P-CH 30V 9.2A 8SO
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF9393TRPBF
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Bảng dữ liệu IRF9393TRPBF DataSheet
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Gói SOIC-8
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 9.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V, 20V |
| RdsOn(Max)@IdVgs | 13.3mOhm @ 9.2A, 20V |
| Vgs(th)(Max)@Id | 2.4V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1110 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Tổng quan
Description
The IRF9393TRPBF is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Manufactured by Infineon Technologies, it is part of the HEXFET® Power MOSFET series, known for high efficiency and reliability. The device features a voltage rating of -30V and a continuous drain current of -12.8A, making it suitable for switching and amplifying signals in power management and motor control applications.
This MOSFET is housed in a surface-mount D-Pak package, allowing for efficient heat dissipation and compact circuit designs. With a low on-resistance (R_DS(on)) of approximately 11 mΩ, the IRF9393TRPBF provides minimal conduction losses, enhancing overall energy efficiency. Additionally, it includes built-in ESD protection, safeguarding against electrostatic discharge damage.
The IRF9393TRPBF is widely used in automotive, industrial, and consumer electronics, particularly where compact and efficient power management solutions are required. Its robust performance parameters make it a preferred choice for designers seeking reliable and efficient MOSFETs.
This MOSFET is housed in a surface-mount D-Pak package, allowing for efficient heat dissipation and compact circuit designs. With a low on-resistance (R_DS(on)) of approximately 11 mΩ, the IRF9393TRPBF provides minimal conduction losses, enhancing overall energy efficiency. Additionally, it includes built-in ESD protection, safeguarding against electrostatic discharge damage.
The IRF9393TRPBF is widely used in automotive, industrial, and consumer electronics, particularly where compact and efficient power management solutions are required. Its robust performance parameters make it a preferred choice for designers seeking reliable and efficient MOSFETs.
Equivalent
The IRF9393TRPBF is a P-channel MOSFET. Equivalent products include the FQP27P06, SI7467DP, and NDP6020P. When selecting an equivalent, ensure the voltage, current ratings, and other specifications match your requirements. Always verify with the manufacturer's datasheets to ensure compatibility.
Features
The IRF9393TRPBF is a HEXFET power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of 30A, making it suitable for low-voltage applications.
2. R_ds(on): It has a low on-state resistance, typically around 3.3 milliohms, which minimizes power loss and improves efficiency.
3. Package Type: This MOSFET is available in a D-Pak (TO-252) package, offering good thermal performance and compact size for surface mount applications.
4. Technology: It utilizes advanced HEXFET technology, providing better efficiency and switching performance.
5. Thermal Performance: The package design allows for efficient heat dissipation, supporting a maximum power dissipation of around 75W.
6. Applications: Commonly used in DC-DC converters, motor drives, and other power management applications.
Overall, the IRF9393TRPBF is valued for its reliability, efficiency, and performance in various electronic and industrial applications.
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of 30A, making it suitable for low-voltage applications.
2. R_ds(on): It has a low on-state resistance, typically around 3.3 milliohms, which minimizes power loss and improves efficiency.
3. Package Type: This MOSFET is available in a D-Pak (TO-252) package, offering good thermal performance and compact size for surface mount applications.
4. Technology: It utilizes advanced HEXFET technology, providing better efficiency and switching performance.
5. Thermal Performance: The package design allows for efficient heat dissipation, supporting a maximum power dissipation of around 75W.
6. Applications: Commonly used in DC-DC converters, motor drives, and other power management applications.
Overall, the IRF9393TRPBF is valued for its reliability, efficiency, and performance in various electronic and industrial applications.
Pinout
The IRF9393TRPBF is a Power MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Infineon Technologies. It is a dual N-channel device typically used for switching applications. The MOSFET is housed in an SO-8 package, which contains 8 pins.
Here is the function of each pin:
1. Pin 1 (G1): Gate of the first MOSFET. It controls the first MOSFET by receiving the input voltage that turns the MOSFET on or off.
2. Pin 2 (S1): Source of the first MOSFET. It is typically connected to ground or the negative voltage supply.
3. Pin 3 (S1): Source of the first MOSFET (typically internally connected to Pin 2).
4. Pin 4 (D2): Drain of the second MOSFET. It is the output controlled by the second MOSFET.
5. Pin 5 (D2): Drain of the second MOSFET (typically internally connected to Pin 4).
6. Pin 6 (G2): Gate of the second MOSFET. It controls the second MOSFET.
7. Pin 7 (S2): Source of the second MOSFET.
8. Pin 8 (S2): Source of the second MOSFET (typically internally connected to Pin 7).
This configuration allows for efficient switching and amplification in electronic circuits.
Here is the function of each pin:
1. Pin 1 (G1): Gate of the first MOSFET. It controls the first MOSFET by receiving the input voltage that turns the MOSFET on or off.
2. Pin 2 (S1): Source of the first MOSFET. It is typically connected to ground or the negative voltage supply.
3. Pin 3 (S1): Source of the first MOSFET (typically internally connected to Pin 2).
4. Pin 4 (D2): Drain of the second MOSFET. It is the output controlled by the second MOSFET.
5. Pin 5 (D2): Drain of the second MOSFET (typically internally connected to Pin 4).
6. Pin 6 (G2): Gate of the second MOSFET. It controls the second MOSFET.
7. Pin 7 (S2): Source of the second MOSFET.
8. Pin 8 (S2): Source of the second MOSFET (typically internally connected to Pin 7).
This configuration allows for efficient switching and amplification in electronic circuits.
Manufacturer
The IRF9393TRPBF is manufactured by Infineon Technologies, a German semiconductor company. Infineon is a leading global provider of semiconductor solutions that contribute to various applications, including automotive, industrial, and consumer electronics. The company specializes in power semiconductors, microcontrollers, and sensors, among other technologies. Infineon is known for its innovation and commitment to energy efficiency, sustainability, and safety in electronic systems.
Application
The IRF9393TRPBF is a power MOSFET commonly used in various applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Power Management: Used in power supplies and voltage regulation circuits to enhance efficiency.
2. Motor Control: Employed in motor drive circuits for industrial and consumer electronics.
3. DC-DC Converters: Utilized in step-up or step-down converters for efficient power conversion.
4. Inverters: Used in inverters for renewable energy systems like solar panels.
5. Load Switching: Ideal for high-speed and high-load switching applications in automotive and industrial sectors.
These applications benefit from the MOSFET's low on-resistance and robust performance.
1. Power Management: Used in power supplies and voltage regulation circuits to enhance efficiency.
2. Motor Control: Employed in motor drive circuits for industrial and consumer electronics.
3. DC-DC Converters: Utilized in step-up or step-down converters for efficient power conversion.
4. Inverters: Used in inverters for renewable energy systems like solar panels.
5. Load Switching: Ideal for high-speed and high-load switching applications in automotive and industrial sectors.
These applications benefit from the MOSFET's low on-resistance and robust performance.
Package
The IRF9393TRPBF comes in a D-PAK (TO-252) package type, which is a surface-mount package commonly used for power MOSFETs and similar components.
