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IRG4PF50WPBF
+BOMIGBT 900V 51A 200W TO247AC
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRG4PF50WPBF
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Bảng dữ liệu IRG4PF50WPBF DataSheet
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Gói TO-247-3
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tube |
| ProductStatus | Obsolete |
| Voltage-CollectorEmitterBreakdown(Max) | 900 V |
| Current-Collector(Ic)(Max) | 51 A |
| Current-CollectorPulsed(Icm) | 204 A |
| Vce(on)(Max)@VgeIc | 2.7V @ 15V, 28A |
| Power-Max | 200 W |
| SwitchingEnergy | 190µJ (on), 1.06mJ (off) |
| InputType | Standard |
| GateCharge | 160 nC |
| Td(on/off)@25°C | 29ns/110ns |
| TestCondition | 720V, 28A, 5Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Tổng quan
Equivalent
- IRG4PC50WPBF (600V, 55A)
- IRG4PC50UDPBF (600V, 55A, Ultrafast)
- STGW40H60DF (600V, 40A, STMicro)
- FGA40N60SMD (600V, 40A, Fairchild/ON Semi)
- HGTG40N60B3 (600V, 75A, Fairchild/ON Semi)
Check datasheets for exact specs and pin compatibility.
Features
- Voltage Rating: 500V (VCES)
- Current Rating: 44A (IC @ 25°C)
- Low VCE(sat): 1.65V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Robust Design: High short-circuit withstand capability (10µs)
- Temperature Range: -55°C to +150°C (Tj)
- Package: TO-247AC (isolated tab for easier mounting)
- Applications: Motor drives, inverters, UPS, and welding equipment
It combines low switching losses with high efficiency, making it suitable for power electronics.
Manufacturer
The IRG4PF50WPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications.