IRGIB10B60KD1P

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IRGIB10B60KD1P

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IGBT 600V 16A 44W TO220FP

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Bulk,Tube
Part Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown(Max) 600 V
Current - Collector(Ic)(Max) 16 A
Current - Collector Pulsed(Icm) 32 A
Vce(on)(Max) @ Vge Ic 2.1V @ 15V, 10A
Power - Max 44 W
Switching Energy 156µJ (on), 165µJ (off)
Input Type Standard
Gate Charge 41 nC
Td(on / off) @ 25°C 25ns/180ns
Test Condition 400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr) 79 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

Tổng quan

Description

The IRGIB10B60KD1P is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching applications. Key features include:
- Voltage Rating: 600V
- Current Rating: 10A
- Low VCE(sat) for efficient conduction
- Fast switching for improved performance in inverters, motor drives, and power supplies
- Built-in diode for freewheeling protection
It is commonly used in industrial and automotive systems requiring robust power control. The module is housed in a compact, insulated package for easy thermal management and integration.
For detailed specifications, refer to the datasheet from Infineon Technologies (likely manufacturer).

Equivalent

The IRGIB10B60KD1P is an IGBT module (600V, 10A). Equivalent alternatives include:
- Infineon: IRG4BC20KD (600V, 20A)
- STMicroelectronics: STGP10H60KD (600V, 10A)
- Fuji Electric: 6MBI10VB-060 (600V, 10A)
- Mitsubishi: CM10DY-12H (600V, 10A)
Check datasheets for pin compatibility and thermal specs before substitution.

Features

The IRGIB10B60KD1P is an IGBT module with the following key features:
- Voltage Rating: 600V
- Current Rating: 10A (continuous)
- Low VCE(sat): Ensures reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Built-in Diode: Includes a freewheeling diode for inductive load protection
- High Isolation Voltage: Suitable for industrial applications
- Compact Package: TO-263 (D2PAK) for easy PCB mounting
- Temperature Range: Operates reliably up to 150°C
Ideal for motor drives, inverters, and power converters.

Pinout

The IRGIB10B60KD1P is an IGBT module with the following specifications:
- Pin Count: Typically 3 main terminals (Collector, Emitter, Gate) plus auxiliary connections (e.g., temperature sensor or Kelvin emitter) depending on the package. Exact count varies by configuration (e.g., 9–12 pins in common modules).
- Function: A 600V, 10A-rated IGBT with an integrated ultra-fast anti-parallel diode, designed for high-efficiency switching in power electronics (e.g., motor drives, inverters).
For precise pinout, refer to the datasheet (e.g., Infineon’s documentation).

Application

The IRGIB10B60KD1P is an IGBT module primarily used in high-power switching applications. Key application areas include:
- Motor Drives: Industrial and automotive motor control systems.
- Power Supplies: High-efficiency switched-mode power supplies (SMPS).
- Renewable Energy: Inverters for solar and wind power systems.
- Welding Equipment: High-current welding machines.
- Induction Heating: Industrial heating systems.
Its robust design and high current/voltage handling make it suitable for demanding environments requiring efficient power switching.

Package

The IRGIB10B60KD1P is an IGBT (Insulated Gate Bipolar Transistor) module in a TO-247 package. It is designed for high-power switching applications, featuring a 600V voltage rating and 10A current rating. The TO-247 package provides robust thermal performance and mechanical durability, making it suitable for industrial and automotive applications.

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